Ag/PVA氧化石墨烯/Ag器件的非挥发性电阻开关行为及时间序列分析

IF 2.7 3区 物理与天体物理 Q2 PHYSICS, APPLIED Journal of Applied Physics Pub Date : 2023-09-08 DOI:10.1063/5.0159624
Mahesh Kumar Yadav, S. S. Kundale, S. Sutar, T. Dongale, Pradip Kumar, Neeraj Panwar
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引用次数: 0

摘要

近年来,非易失性存储设备因其在电阻随机存取存储器和神经形态计算中的应用而受到世界各地研究人员的极大关注。在这里,我们制备了聚乙烯醇-氧化石墨烯(PVA-GO)复合材料作为用于电阻开关的活性材料,具有不同浓度的GO(0.0、0.1、0.2、0.3、0.4和0.5 重量。 % GO溶液)分散在5 重量。 % PVA基质,体积比为2:1。我们展示了Ag/PVA-GO/Ag器件的非易失性自由形成电阻开关特性。通过x射线衍射图确定了PVA-GO复合材料的结构性能,表明GO在PVA基体中完全分散。Ag/PVA-GO-0.1 重量。 %/Ag器件在VSET中表现出更好的双极电阻开关 ∼ 0.4 至-0.8时的V和VRESET V.该器件在0.1的读取电压下显示出分辨率良好的两种不同状态 在耐久性和保持性测量中为V。制造的器件开关成功测试了2.5 × 103次循环并保持其状态3.36 × 103 s,没有任何可观察到的退化。此外,使用时间序列分析对非挥发性保留特性进行了建模。为此,使用了Holt–Winter的指数平滑技术。此外,电荷-通量连锁特性表现出双值函数,时域电荷和时域通量表现出不对称行为。导电机制在低电阻状态的整个区域和高电阻状态的低电压区域中表现出欧姆行为。在高电阻状态的高压区域,观察到空间电荷受限的传导机制。电阻开关行为是在适当的模型的帮助下解释的。
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Non-volatile resistive switching behavior and time series analysis of Ag/PVA-graphene oxide/Ag device
Non-volatile memory devices have been getting significant attention from researchers worldwide in recent years due to their application in resistive random access memory and neuromorphic computing. Here, we have fabricated polyvinyl alcohol-graphene oxide (PVA-GO) composite as an active material for the resistive switching with different concentrations of GO (0.0, 0.1, 0.2, 0.3, 0.4, and 0.5 wt. % GO solution) dispersed in 5 wt. % PVA matrix in a 2:1 volume ratio. We demonstrate the non-volatile forming free resistive switching properties of Ag/PVA-GO/Ag devices. Structural properties of PVA-GO composites are established from the x-ray diffraction pattern, which indicates the complete dispersion of GO inside the PVA matrix. The Ag/PVA-GO-0.1 wt. %/Ag device shows better bipolar resistive switching at VSET ∼ 0.4 V and VRESET at ∼−0.8 V. This device indicates well-resolved two distinct states at a read voltage of 0.1 V in endurance and retention measurements. The fabricated device switches successfully tested for 2.5 × 103 cycles and retains its state for 3.36 × 103 s without any observable degradation. Furthermore, the non-volatile retention property was modeled using time series analysis. For this, Holt–Winter's exponential smoothing technique was utilized. Additionally, the charge–flux linkage characteristic shows the double-valued function, and time domain–charge and time domain–flux show asymmetric behaviors. The electrical conduction mechanism exhibits ohmic behavior in the entire region of the low resistance state and the lower voltage region of the high resistance state. In the high-voltage region of the high resistance state, the space charge-limited conduction mechanism is observed. The resistive switching behavior is explained with the help of an appropriate model.
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来源期刊
Journal of Applied Physics
Journal of Applied Physics 物理-物理:应用
CiteScore
5.40
自引率
9.40%
发文量
1534
审稿时长
2.3 months
期刊介绍: The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. Topics covered in JAP are diverse and reflect the most current applied physics research, including: Dielectrics, ferroelectrics, and multiferroics- Electrical discharges, plasmas, and plasma-surface interactions- Emerging, interdisciplinary, and other fields of applied physics- Magnetism, spintronics, and superconductivity- Organic-Inorganic systems, including organic electronics- Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena- Physics of devices and sensors- Physics of materials, including electrical, thermal, mechanical and other properties- Physics of matter under extreme conditions- Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena- Physics of semiconductors- Soft matter, fluids, and biophysics- Thin films, interfaces, and surfaces
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