{"title":"集成工艺中的SiC等离子体和电化学刻蚀","authors":"Nour Beydoun, M. Lazar, Xavier Gassmann","doi":"10.59277/romjist.2023.2.10","DOIUrl":null,"url":null,"abstract":"This paper reports research on deep etching of silicon carbide (SiC) to achieve isolated deep trenches in the same thick SiC substrates. This paper combines both plasma etching and electrochemical etching on p-type SiC above n-type SiC layers. Uniform and","PeriodicalId":54448,"journal":{"name":"Romanian Journal of Information Science and Technology","volume":" ","pages":""},"PeriodicalIF":3.7000,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SiC Plasma and Electrochemical Etching for Integrated Technology Processes\",\"authors\":\"Nour Beydoun, M. Lazar, Xavier Gassmann\",\"doi\":\"10.59277/romjist.2023.2.10\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports research on deep etching of silicon carbide (SiC) to achieve isolated deep trenches in the same thick SiC substrates. This paper combines both plasma etching and electrochemical etching on p-type SiC above n-type SiC layers. Uniform and\",\"PeriodicalId\":54448,\"journal\":{\"name\":\"Romanian Journal of Information Science and Technology\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":3.7000,\"publicationDate\":\"2023-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Romanian Journal of Information Science and Technology\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://doi.org/10.59277/romjist.2023.2.10\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"COMPUTER SCIENCE, THEORY & METHODS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Romanian Journal of Information Science and Technology","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.59277/romjist.2023.2.10","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"COMPUTER SCIENCE, THEORY & METHODS","Score":null,"Total":0}
SiC Plasma and Electrochemical Etching for Integrated Technology Processes
This paper reports research on deep etching of silicon carbide (SiC) to achieve isolated deep trenches in the same thick SiC substrates. This paper combines both plasma etching and electrochemical etching on p-type SiC above n-type SiC layers. Uniform and
期刊介绍：
The primary objective of this journal is the publication of original results of research in information science and technology. There is no restriction on the addressed topics, the only acceptance criterion being the originality and quality of the articles, proved by independent reviewers. Contributions to recently emerging areas are encouraged.
Romanian Journal of Information Science and Technology (a publication of the Romanian Academy) is indexed and abstracted in the following Thomson Reuters products and information services:
• Science Citation Index Expanded (also known as SciSearch®),
• Journal Citation Reports/Science Edition.
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