全介电超表面中由准束缚态控制的高q共振

IF 15.3 1区 物理与天体物理 Q1 OPTICS Opto-Electronic Advances Pub Date : 2022-06-16 DOI:10.29026/oea.2021.200030
C. Fang, Qiyu Yang, Qingchen Yuan, Xuetao Gan, Jianlin Zhao, Yao Shao, Y. Liu, G. Han, Y. Hao
{"title":"全介电超表面中由准束缚态控制的高q共振","authors":"C. Fang, Qiyu Yang, Qingchen Yuan, Xuetao Gan, Jianlin Zhao, Yao Shao, Y. Liu, G. Han, Y. Hao","doi":"10.29026/oea.2021.200030","DOIUrl":null,"url":null,"abstract":"The realization of high- Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum (BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-sym-metry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing. High- Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces. Opto-Electron","PeriodicalId":19611,"journal":{"name":"Opto-Electronic Advances","volume":" ","pages":""},"PeriodicalIF":15.3000,"publicationDate":"2022-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"47","resultStr":"{\"title\":\"High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces\",\"authors\":\"C. Fang, Qiyu Yang, Qingchen Yuan, Xuetao Gan, Jianlin Zhao, Yao Shao, Y. Liu, G. Han, Y. Hao\",\"doi\":\"10.29026/oea.2021.200030\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The realization of high- Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum (BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-sym-metry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing. High- Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces. Opto-Electron\",\"PeriodicalId\":19611,\"journal\":{\"name\":\"Opto-Electronic Advances\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":15.3000,\"publicationDate\":\"2022-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"47\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Opto-Electronic Advances\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.29026/oea.2021.200030\",\"RegionNum\":1,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Opto-Electronic Advances","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.29026/oea.2021.200030","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 47

摘要

报道了在具有各种破坏对称块的硅超表面中实现高Q谐振。理论分析表明,超表面中的尖锐共振源于连续体中受对称保护的束缚(BIC),磁偶极子支配着这些特殊的状态。断裂对称块中的缺陷尺寸越小,则产生具有较大Q因子的谐振。重要的是,这种关系可以通过改变结构参数来调整,这是由BIC拓扑配置的调制引起的。因此,通过优化纳米结构的尺寸,可以容易地实现大于3000的Q因子。在这种尖锐的谐振下,图案化结构中的三次谐波产生信号的强度可以是平坦硅膜的368倍。所提出的策略和基本理论可以为实现超尖锐共振开辟新的途径,这可能会促进潜在的非线性、激光作用和传感元器件的发展。所有介电超表面中的准束缚态控制着高Q谐振。光电子
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High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces
The realization of high- Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum (BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-sym-metry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing. High- Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces. Opto-Electron
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来源期刊
CiteScore
19.30
自引率
7.10%
发文量
128
期刊介绍: Opto-Electronic Advances (OEA) is a distinguished scientific journal that has made significant strides since its inception in March 2018. Here's a collated summary of its key features and accomplishments: Impact Factor and Ranking: OEA boasts an impressive Impact Factor of 14.1, which positions it within the Q1 quartiles of the Optics category. This high ranking indicates that the journal is among the top 25% of its field in terms of citation impact. Open Access and Peer Review: As an open access journal, OEA ensures that research findings are freely available to the global scientific community, promoting wider dissemination and collaboration. It upholds rigorous academic standards through a peer review process, ensuring the quality and integrity of the published research. Database Indexing: OEA's content is indexed in several prestigious databases, including the Science Citation Index (SCI), Engineering Index (EI), Scopus, Chemical Abstracts (CA), and the Index to Chinese Periodical Articles (ICI). This broad indexing facilitates easy access to the journal's articles by researchers worldwide. Scope and Purpose: OEA is committed to serving as a platform for the exchange of knowledge through the publication of high-quality empirical and theoretical research papers. It covers a wide range of topics within the broad area of optics, photonics, and optoelectronics, catering to researchers, academicians, professionals, practitioners, and students alike.
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