İlknur GÜNDÜZ AYKAÇ, Aykut Can Önel, Burcu TOYDEMİR YAŞASUN, L. ÇOLAKEROL ARSLAN
{"title":"Si（111）上生长的掺Mn晶体和非晶Ge薄膜的磁性","authors":"İlknur GÜNDÜZ AYKAÇ, Aykut Can Önel, Burcu TOYDEMİR YAŞASUN, L. ÇOLAKEROL ARSLAN","doi":"10.3906/fiz-1909-17","DOIUrl":null,"url":null,"abstract":"We investigated the effects of crystalline order on the structural and magnetic properties of ultrathin Mndoped Ge thin films grown by thermal diffusion. The dopant motion which occurs during the annealing stage appears to differ considerably depending upon whether the Ge layer is in a crystalline or an amorphous state. The details of the temperature-dependent magnetization curves reveal that the a-MnGe and c-MnGe films show ferromagnetic property up to 300K and ~250K, respectively. Ferromagnetic Mn5 Ge3 thin film with weakly anisotropic in-plane magnetization is formed on amorphous Ge thin film, while weakly ferromagnetic Mn5 Gex Si3−x nanostructures are developed on crystalline Ge thin film due to diffusion of Mn atoms through the Ge layer and interact with Si substrate.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2020-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Magnetic properties of Mn doped crystalline and amorphous Ge thin films grown on Si (111)\",\"authors\":\"İlknur GÜNDÜZ AYKAÇ, Aykut Can Önel, Burcu TOYDEMİR YAŞASUN, L. ÇOLAKEROL ARSLAN\",\"doi\":\"10.3906/fiz-1909-17\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated the effects of crystalline order on the structural and magnetic properties of ultrathin Mndoped Ge thin films grown by thermal diffusion. The dopant motion which occurs during the annealing stage appears to differ considerably depending upon whether the Ge layer is in a crystalline or an amorphous state. The details of the temperature-dependent magnetization curves reveal that the a-MnGe and c-MnGe films show ferromagnetic property up to 300K and ~250K, respectively. Ferromagnetic Mn5 Ge3 thin film with weakly anisotropic in-plane magnetization is formed on amorphous Ge thin film, while weakly ferromagnetic Mn5 Gex Si3−x nanostructures are developed on crystalline Ge thin film due to diffusion of Mn atoms through the Ge layer and interact with Si substrate.\",\"PeriodicalId\":46003,\"journal\":{\"name\":\"Turkish Journal of Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2020-02-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Turkish Journal of Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3906/fiz-1909-17\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Turkish Journal of Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3906/fiz-1909-17","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Magnetic properties of Mn doped crystalline and amorphous Ge thin films grown on Si (111)
We investigated the effects of crystalline order on the structural and magnetic properties of ultrathin Mndoped Ge thin films grown by thermal diffusion. The dopant motion which occurs during the annealing stage appears to differ considerably depending upon whether the Ge layer is in a crystalline or an amorphous state. The details of the temperature-dependent magnetization curves reveal that the a-MnGe and c-MnGe films show ferromagnetic property up to 300K and ~250K, respectively. Ferromagnetic Mn5 Ge3 thin film with weakly anisotropic in-plane magnetization is formed on amorphous Ge thin film, while weakly ferromagnetic Mn5 Gex Si3−x nanostructures are developed on crystalline Ge thin film due to diffusion of Mn atoms through the Ge layer and interact with Si substrate.
期刊介绍：
The Turkish Journal of Physics is published electronically 6 times a year by the Scientific and Technological Research Council of Turkey (TÜBİTAK) and accepts English-language manuscripts in various fields of research in physics, astrophysics, and interdisciplinary topics related to physics. Contribution is open to researchers of all nationalities.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
