用于存储器应用的具有可重构选择性的直接生长螺旋形氧化钨基器件

IF 1.6 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Low Power Electronics and Applications Pub Date : 2022-10-15 DOI:10.3390/jlpea12040055

Ying‐Chen Chen, Yifu Huang, Sumant Sarkar, John G. Gibbs, Jack C. Lee

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引用次数: 0

摘要

在这项研究中，提出了一种直接生长的螺旋形氧化钨基（h-WOx）选择器件，用于新兴的存储器应用。在0.1至0.01nA的低关断电流下，选择器件中的选择性为10至103。此外，h-WOx选择器件中易失性开关的选择性可通过对一次性负电压操作的伪RESET过程重新配置。具有掠角沉积（GLAD）方法的螺旋形选择器件显示出良好的兼容性、低功耗、良好的选择性和良好的可重构性，可用于下一代存储器应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications

In this study, a direct-grown helical-shaped tungsten-oxide-based (h-WOx) selection device is presented for emerging memory applications. The selectivity in the selection devices is from 10 to 103 with a low off-current of 0.1 to 0.01 nA. In addition, the selectivity of volatile switching in the h-WOx selection devices is reconfigurable with a pseudo RESET process on the one-time negative voltage operations. The helical-shaped selection devices with the glancing angle deposition (GLAD) method show good compatibility, low power consumption, good selectivity, and good reconfigurability for next-generation memory applications.

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