J. Yuan, J. S. Wang, S. Q. Liu, H. Zhao, P. Wang, X. Deng
{"title":"SnS/CZTSSe异质结太阳能电池的数值模拟","authors":"J. Yuan, J. S. Wang, S. Q. Liu, H. Zhao, P. Wang, X. Deng","doi":"10.15251/jor.2023.191.31","DOIUrl":null,"url":null,"abstract":"This work combines the advantages of SnS and CZTSSe to constitute the SnS/CZTSSe heterojunction solar cells, and the effects of various factors on cell performance were studied by using numerical simulation. The results show that the optimal thickness of CZTSSe and SnS are 0.1 μm and 2.0 μm, respectively. Furthermore, the optimal doping concentrations of CZTSSe and SnS are 1×1017 cm-3 and 1×1016 cm-3 , respectively. In addition, defect states have little impacts on the cell performance when the density of Gaussian defect states of CZTSSe and SnS are less than 1×1016 cm-3 and 1×1014 cm-3 , respectively, and the density of tail defect states of these two materials are both less than 1×1019 cm-3 eV-1 . Moreover, the potential conversion efficiency of the SnS/CZTSSe heterojunction solar cells can reach 23.92%. Therefore, the SnS/CZTSSe heterojunction solar cell may be a promising photovoltaic structure","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Numerical simulation of SnS/CZTSSe heterojunction solar cells\",\"authors\":\"J. Yuan, J. S. Wang, S. Q. Liu, H. Zhao, P. Wang, X. Deng\",\"doi\":\"10.15251/jor.2023.191.31\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work combines the advantages of SnS and CZTSSe to constitute the SnS/CZTSSe heterojunction solar cells, and the effects of various factors on cell performance were studied by using numerical simulation. The results show that the optimal thickness of CZTSSe and SnS are 0.1 μm and 2.0 μm, respectively. Furthermore, the optimal doping concentrations of CZTSSe and SnS are 1×1017 cm-3 and 1×1016 cm-3 , respectively. In addition, defect states have little impacts on the cell performance when the density of Gaussian defect states of CZTSSe and SnS are less than 1×1016 cm-3 and 1×1014 cm-3 , respectively, and the density of tail defect states of these two materials are both less than 1×1019 cm-3 eV-1 . Moreover, the potential conversion efficiency of the SnS/CZTSSe heterojunction solar cells can reach 23.92%. Therefore, the SnS/CZTSSe heterojunction solar cell may be a promising photovoltaic structure\",\"PeriodicalId\":54394,\"journal\":{\"name\":\"Journal of Ovonic Research\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Ovonic Research\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.15251/jor.2023.191.31\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Ovonic Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/jor.2023.191.31","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Numerical simulation of SnS/CZTSSe heterojunction solar cells
This work combines the advantages of SnS and CZTSSe to constitute the SnS/CZTSSe heterojunction solar cells, and the effects of various factors on cell performance were studied by using numerical simulation. The results show that the optimal thickness of CZTSSe and SnS are 0.1 μm and 2.0 μm, respectively. Furthermore, the optimal doping concentrations of CZTSSe and SnS are 1×1017 cm-3 and 1×1016 cm-3 , respectively. In addition, defect states have little impacts on the cell performance when the density of Gaussian defect states of CZTSSe and SnS are less than 1×1016 cm-3 and 1×1014 cm-3 , respectively, and the density of tail defect states of these two materials are both less than 1×1019 cm-3 eV-1 . Moreover, the potential conversion efficiency of the SnS/CZTSSe heterojunction solar cells can reach 23.92%. Therefore, the SnS/CZTSSe heterojunction solar cell may be a promising photovoltaic structure
期刊介绍:
Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.