自旋电子学:回顾与展望

IF 1.3 4区 计算机科学 Q1 Computer Science IBM Journal of Research and Development Pub Date : 2006-01-01 DOI:10.1147/rd.501.0101
S. A. Wolf;A. Y. Chtchelkanova;D. M. Treger
{"title":"自旋电子学:回顾与展望","authors":"S. A. Wolf;A. Y. Chtchelkanova;D. M. Treger","doi":"10.1147/rd.501.0101","DOIUrl":null,"url":null,"abstract":"Spintronics is a rapidly emerging field of science and technology that will most likely have a significant impact on the future of all aspects of electronics as we continue to move into the 21st century. Conventional electronics are based on the charge of the electron. Attempts to use the other fundamental property of an electron, its spin, have given rise to a new, rapidly evolving field, known as spintronics, an acronym for spin transport electronics that was first introduced in 1996 to designate a program of the U.S. Defense Advanced Research Projects Agency (DARPA). Initially, the spintronics program involved overseeing the development of advanced magnetic memory and sensors based on spin transport electronics. It was then expanded to included Spins IN Semiconductors (SPINS), in the hope of developing a new paradigm in semiconductor electronics based on the spin degree of freedom of the electron. Studies of spin-polarized transport in bulk and low-dimensional semiconductor structures show promise for the creation of a hybrid device that would combine magnetic storage with gain—in effect, a spin memory transistor. This paper reviews some of the major developments in this field and provides a perspective of what we think will be the future of this exciting field. It is not meant to be a comprehensive review of the whole field but reflects a bias on the part of the authors toward areas that they believe will lead to significant future technologies.","PeriodicalId":55034,"journal":{"name":"IBM Journal of Research and Development","volume":null,"pages":null},"PeriodicalIF":1.3000,"publicationDate":"2006-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1147/rd.501.0101","citationCount":"196","resultStr":"{\"title\":\"Spintronics—A retrospective and perspective\",\"authors\":\"S. A. Wolf;A. Y. Chtchelkanova;D. M. Treger\",\"doi\":\"10.1147/rd.501.0101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Spintronics is a rapidly emerging field of science and technology that will most likely have a significant impact on the future of all aspects of electronics as we continue to move into the 21st century. Conventional electronics are based on the charge of the electron. Attempts to use the other fundamental property of an electron, its spin, have given rise to a new, rapidly evolving field, known as spintronics, an acronym for spin transport electronics that was first introduced in 1996 to designate a program of the U.S. Defense Advanced Research Projects Agency (DARPA). Initially, the spintronics program involved overseeing the development of advanced magnetic memory and sensors based on spin transport electronics. It was then expanded to included Spins IN Semiconductors (SPINS), in the hope of developing a new paradigm in semiconductor electronics based on the spin degree of freedom of the electron. Studies of spin-polarized transport in bulk and low-dimensional semiconductor structures show promise for the creation of a hybrid device that would combine magnetic storage with gain—in effect, a spin memory transistor. This paper reviews some of the major developments in this field and provides a perspective of what we think will be the future of this exciting field. It is not meant to be a comprehensive review of the whole field but reflects a bias on the part of the authors toward areas that they believe will lead to significant future technologies.\",\"PeriodicalId\":55034,\"journal\":{\"name\":\"IBM Journal of Research and Development\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2006-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1147/rd.501.0101\",\"citationCount\":\"196\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IBM Journal of Research and Development\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/5388780/\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"Computer Science\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IBM Journal of Research and Development","FirstCategoryId":"94","ListUrlMain":"https://ieeexplore.ieee.org/document/5388780/","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"Computer Science","Score":null,"Total":0}
引用次数: 196

摘要

自旋电子学是一个迅速崛起的科学技术领域,随着我们继续进入21世纪,它很可能对电子产品的各个方面产生重大影响。传统电子学是以电子的电荷为基础的。试图利用电子的另一个基本特性——自旋,已经产生了一个新的、快速发展的领域,被称为自旋电子学,是自旋输运电子学的首字母缩写,于1996年首次引入,用于指定美国国防高级研究计划局(DARPA)的一个项目。最初,自旋电子学项目涉及监督基于自旋输运电子学的先进磁存储器和传感器的开发。然后扩展到包括半导体中的自旋(自旋),希望在基于电子自旋自由度的半导体电子学中开发新的范例。对体和低维半导体结构中自旋极化输运的研究表明,有希望创造一种混合装置,将磁存储与增益效应结合起来,即自旋存储晶体管。本文回顾了该领域的一些主要发展,并提供了一个我们认为这个令人兴奋的领域的未来的观点。它并不是对整个领域的全面回顾,而是反映了部分作者对他们认为将导致重大未来技术的领域的偏见。
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Spintronics—A retrospective and perspective
Spintronics is a rapidly emerging field of science and technology that will most likely have a significant impact on the future of all aspects of electronics as we continue to move into the 21st century. Conventional electronics are based on the charge of the electron. Attempts to use the other fundamental property of an electron, its spin, have given rise to a new, rapidly evolving field, known as spintronics, an acronym for spin transport electronics that was first introduced in 1996 to designate a program of the U.S. Defense Advanced Research Projects Agency (DARPA). Initially, the spintronics program involved overseeing the development of advanced magnetic memory and sensors based on spin transport electronics. It was then expanded to included Spins IN Semiconductors (SPINS), in the hope of developing a new paradigm in semiconductor electronics based on the spin degree of freedom of the electron. Studies of spin-polarized transport in bulk and low-dimensional semiconductor structures show promise for the creation of a hybrid device that would combine magnetic storage with gain—in effect, a spin memory transistor. This paper reviews some of the major developments in this field and provides a perspective of what we think will be the future of this exciting field. It is not meant to be a comprehensive review of the whole field but reflects a bias on the part of the authors toward areas that they believe will lead to significant future technologies.
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IBM Journal of Research and Development
IBM Journal of Research and Development 工程技术-计算机:硬件
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期刊介绍: The IBM Journal of Research and Development is a peer-reviewed technical journal, published bimonthly, which features the work of authors in the science, technology and engineering of information systems. Papers are written for the worldwide scientific research and development community and knowledgeable professionals. Submitted papers are welcome from the IBM technical community and from non-IBM authors on topics relevant to the scientific and technical content of the Journal.
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