Quantum effects on modulational amplification in ion-implanted semiconductor magnetoplasmas

Using a quantum hydrodynamic model, quantum effects (via Bohm potential) on modulational amplification in ion-implanted semiconductor magnetoplasmas are investigated. Expressions are obtained for the threshold pump amplitude and the growth rate of modulated beam for both the electrons and implanted colloids. Numerical analysis is performed for n-InSb/CO₂ laser system. The dependence of the threshold pump amplitude and the growth rate of modulated beam for electrons on wave number, applied magnetic field (via electron cyclotron frequency) and electron concentration (via electron-plasma frequency) and the dependence of the threshold pump amplitude and the growth rate of modulated beam for implanted colloids on wave number and colloid concentration (via colloid-plasma frequency) are explored. The lowering in threshold pump amplitude and enhancement of the growth rate of modulated beam for both the electrons and implanted colloids are observed by incorporating the quantum effects. The analysis provides detailed information of quantum effects on modulational amplification in ion-implanted semiconductor magnetoplasmas composed of electrons and negatively charged implanted colloids and establishes the technological potentiality of chosen samples as the hosts for the fabrication of efficient optical modulators.