β-Sn的原子水平剪应力-应变行为

Yongchang Lee, C. Basaran
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引用次数: 2

摘要

摘要在原子水平上研究了β-Sn沿5种不同晶格取向的剪切变形。模拟模型是完美的无缺陷β-Sn晶格。为了研究β-Sn在剪切过程中的原子行为和本构关系,利用分子动力学模拟软件LAMMPS对β-Sn模型进行了模拟,并利用维里应力计算了剪切应力。采用改进的嵌入原子法测定β-Sn电位。采用恒定剪切应变速率17.5 (%/ns)。通过使用规范集成进行仿真。为了研究热效应,在27、127和227℃三种不同温度下对模型进行了模拟,并将结果与实验数据进行了比较。
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Atomic-Level Shear Stress-Strain Behavior of β-Sn
AbstractShear deformation of β-Sn along five different lattice orientations is studied at the atomic level. Simulated models are perfect β-Sn lattice without defects. To study the atomic behavior and constitutive relationship of β-Sn in shear, the β-Sn models are simulated by a molecular dynamics simulation package, LAMMPS, and the shear stress is computed by using virial stress. A modified embedded-atom method is employed for the β-Sn potential. The constant shear strain rate, 17.5 (%/ns), is applied. Simulation is conducted by using a canonical ensemble. To investigate thermal effects, the models are simulated at three different temperatures, 27, 127, and 227°C, and the results were compared with experimental data.
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