非对称老化和工作负载敏感偏置温度不稳定性传感器

Min Chen, V. Reddy, S. Krishnan, V. Srinivasan, Yu Cao
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引用次数: 15

摘要

不同工作负载下的非对称老化要求片上老化传感器对信号边缘退化敏感。本文作者提出了一种45nm片上老化传感器,可以直接监测电路在动态运行过程中的性能退化。
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Asymmetric Aging and Workload Sensitive Bias Temperature Instability Sensors
Asymmetric aging under different workload profiles requires on-chip aging sensors to be sensitive to signal edge degradation. The authors in this paper present a 45-nm on-chip aging sensor that directly monitors circuit performance degradation during dynamic operation.
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来源期刊
IEEE Design & Test of Computers
IEEE Design & Test of Computers 工程技术-工程:电子与电气
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1
审稿时长
>12 weeks
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