单晶GaN(0001)表面Zn电沉积:成核和生长机制

IF 2.3 Q3 ELECTROCHEMISTRY International journal of electrochemistry Pub Date : 2016-02-09 DOI:10.1155/2016/3212703
Fei Peng, S. Qin, Yu Zhao, Gebo Pan
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引用次数: 4

摘要

利用循环伏安法、计时安培法和Tafel图等电化学技术,研究了锌在硫酸盐溶液中在单晶GaN(0001)上的电化学沉积。利用扫描电子显微镜、x射线衍射和能量色散x射线分析对锌矿床的形貌和晶体结构进行了表征。结果表明,锌在GaN电极上的沉积始于−1.12 V对Ag/AgCl的电位。根据Tafel图,计算得到了~0.132 mA cm−2的交换电流密度。此外,电流瞬态测量结果表明,在10mm ZnSO4中,Zn的沉积过程遵循瞬时成核
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Zn Electrodeposition on Single-Crystal GaN(0001) Surface: Nucleation and Growth Mechanism
The electrochemical deposition of zinc on single-crystal -type GaN(0001) from a sulphate solution has been investigated on the basis of electrochemical techniques including cyclic voltammetry, chronoamperometry, and Tafel plot. The morphology and crystal structure of zinc deposits have been characterized by means of scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray analysis. The result has revealed that the deposition of Zn on GaN electrode commenced at a potential of −1.12 V versus Ag/AgCl. According to the Tafel plot, an exchange current density of ~0.132 mA cm−2 was calculated. In addition, the current transient measurements have shown that Zn deposition process followed the instantaneous nucleation in 10 mM ZnSO4
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