利用复盖层减少植入结整流器辐射缺陷的数量

International journal of micro-nano scale transport Pub Date : 2012-09-01 DOI:10.1260/1759-3093.3.3-4.119

E. Pankratov, E. Bulaeva

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引用次数: 33

摘要

介绍了一种减小异质结整流器面积辐射缺陷数量的方法。该方法基于均匀样品中掺杂离子的注入、损伤区域的过度生长和辐射缺陷的退火。在这种情况下，在空间条件下，可以得到辐射缺陷数量的减少。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Decreasing of quantity of radiation defects in an implanted-junction rectifiers by using overlayers

We introduce an approach to decrease quantity of radiation defects in area of implanted-heterojunction rectifier. The approach based on implantation of ions of dopant in a homogenous sample, overgrowth of the damaged area and annealing of radiation defects. In this situation under spatial conditions one can obtain decreasing of quantity of radiation defects.

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International journal of micro-nano scale transport

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