纳米结构台阶高度样品的制备与表征

IF 0.5 Q4 ENGINEERING, MULTIDISCIPLINARY International Journal of Computing Science and Mathematics Pub Date : 2020-07-27 DOI:10.1504/ijcsm.2020.10030825
F. Xu, Xiao-tong Wu, Chun-long Zou, Sheng-Huai Wang, Yu-ning Zhong
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引用次数: 1

摘要

台阶高度校准样品是一种高精度的高度(深度)标准传递材料,用于校正AFM、SEM、白光干涉仪等表面结构测量仪器的z轴特征参数值。它具有值传递准确、结构尺寸小的特点。根据VLSI台阶高度标准的可追溯性值,采用电感耦合等离子体刻蚀和光刻技术制备了标称高度为8 nm、18 nm和44 nm的台阶结构标定样品,并利用原子力显微镜对台阶结构的高度和表面粗糙度进行了评价。实验结果表明,该算法计算的步长标准差分别为0.820 nm、0.770 nm、1.786 nm。阶梯结构的上表面粗糙度为SiO2膜的表面粗糙度。底表面粗糙度与SiO2膜表面质量、ICP刻蚀工艺参数有关。
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Fabrication and characterisation of nanostructure step height sample
Step height calibration sample is a high-precision height (depth) standard transfer material for correcting the Z-axis characteristic parameter values of surface structure measuring instruments such as AFM, SEM and white light interferometer. It has the characteristics of accurate value transfer and small size structure. According to the traceability value of VLSI step height standard, step structure calibration samples with nominal height of 8 nm, 18 nm and 44 nm were fabricated by inductively coupled plasma (ICP) etching and lithography, and the height and surface roughness of the step structures are evaluated by AFM. The experimental results show that the standard deviation of the step height calculated by the algorithm is 0.820 nm, 0.770 nm, 1.786 nm, respectively. The upper surface roughness of the step structure was the surface roughness of the SiO2 film. The roughness of the bottom surface was related to the surface quality of SiO2 film, ICP etching process parameters.
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CiteScore
1.30
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0.00%
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37
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