R. Asri, N. Hamzah, M. A. Ahmad, E. Alias, M. Sahar, M. Abdullah
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Influence of growth temperature of p-GaN layer on the characteristics of InGaN/GaN blue light emitting diodes
- InGaN/GaN blue light-emitting diodes (LEDs) have been successfully growth via metal organic chemical vapor deposition (MOCVD) in temperature range 920 to 1020 °C growth temperatures for p-GaN layer. The significant of p-GaN growth temperature are studied in detail according to the electrical, optical, and structural performances of InGaN/GaN multiple-quantum-well (MQW) blue LEDs. From experimental analysis, decrement growth temperature of p-GaN layer shows improvement trends in term of output power values and turn on voltage values. The optical and structural properties of InGaN/GaN MQW blue LEDs structure were enhanced based on the decrement of photoluminescence (PL) intensity with increasing growth temperature of the p-GaN layer. This study yields an optimized p-GaN layer growth temperature for understanding highly efficient InGaN/GaN blue LED devices.
期刊介绍:
IJNT offers a multidisciplinary source of information in all subjects and topics related to Nanotechnology, with fundamental, technological, as well as societal and educational perspectives. Special issues are regularly devoted to research and development of nanotechnology in individual countries and on specific topics.