用GGA近似计算MgO纳米晶体的结构和光电性质

IF 1 4区 材料科学 Journal of Ovonic Research Pub Date : 2023-01-01 DOI:10.15251/jor.2023.193.265
M. Myvizhi, K. Satheesh kumar, P. Kavitha, P. Selvakumar
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引用次数: 0

摘要

本研究使用CASTEP代码和密度泛函理论(DFT)研究了MgO的结构、电学性质和光学性质。采用广义梯度近似(GGA-PW91近似)测量带隙能量和交换相关能量。该计算是基于立方MgO晶体结构进行的,该结构具有Fm-3m空间群和3x3x3超级单体。在结构优化中,晶格常数和体模量弹性常数的预期结果与已知的实验和理论非常接近。预期的G点直接带隙为4.283eV,与测试结果非常吻合。此外,还测量了态的总密度(DOS)和部分密度(PDOS),并根据撞击材料的声子的不同能量来观察吸收系数的结果。
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Structure and opto-electronic properties of MgO nanocrystals calculated by GGA approximation
This study uses the CASTEP code and the density functional theory (DFT) to look into the structure, electrical properties, and optical properties of MgO. The generalised gradient approximation (GGA-PW91 approximation) was used to measure both the energy of the band gap and the energy of the exchange-correlation. This computation was done based on the cubic MgO crystal structure, which has a space group of Fm-3m and a 3x3x3 supercell. In structural optimization, the results that are expected for the lattice constant and the bulk modulus elastic constant are very close to known experiments and theories. The anticipated direct band gap of 4.283eV at the G point is in excellent agreement with the results of the tests. Also, the total (DOS) and partial (PDOS) densities of states have been measured, and the results of the absorption coefficient have been looked at in terms of the different energies of the phonons that hit the material.
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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