衬底偏置溅射FeTaN薄膜的双结构叠层磁头

IEEE Translation Journal on Magnetics in Japan Pub Date : 1994-07-01 DOI:10.1109/TJMJ.1994.4565888

K. Nago;A. Natsui;H. Yohda;H. Sakakima;Y. Nakatani;I. Aokura

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引用次数: 1

摘要

由电绝缘的厚FeTaN层制备了具有双层结构的衬底偏压溅射FeTaN/SiO2多层膜。这些是由具有交替各向异性方向的薄FeTaN层构成的。这种薄膜，以下称为“双结构衬底偏压溅射多层”（DSBM）薄膜，是为在磁头中的潜在应用而开发的。已经开发了由夹在陶瓷衬底之间的DSBM膜组成的双结构层压（DSL）磁头。这些磁头表现出与由与高矫顽力带一起使用的传统层压（CL）FeTaN薄膜磁头组成的磁头相同的优异记录特性。然而，它们的再现特性优于CL磁头在高频下的再现特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Double-Structured Laminated Heads with Substrate Bias-Sputtered FeTaN Films

Substrate bias-sputtered FeTaN/SiO 2 multilayer films with a doublelayer structure were prepared from electrically insulated thick FeTaN layers. These were built up of thin FeTaN layers with alternating anisotropy direction. Such films, hereafter referred to as "Double-Structured substrate Bias-sputtered Multilayer" (DSBM) films, were developed for potential application in magnetic heads. Double-Structured Laminated (DSL) heads composed of DSBM films sandwiched between ceramic substrates have been developed. These heads exhibit excellent recording characteristics equal to those of heads composed of Conventional Laminated (CL) FeTaN film heads used with high-coercivity tape. However, their reproduction characteristics are superior to those of CL heads at high frequencies.

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