用电子显微镜研究薄膜磁头写入后噪声与磁畴的相关性

K. Kobayashi
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引用次数: 1

摘要

写入后的噪声已经在薄膜磁头中被报道,尽管其来源尚未确定。为了发现这些噪声源,我在用电子显微镜写作后观察了磁畴结构的转换。磁畴观测涉及使用JEOL 2000FX II 200kV电子显微镜对背散射电子对比度(II型)进行锁定图像处理。薄膜磁头由10mAP-p、100kHz的驱动电流激励。磁头的上磁轭中的磁畴是在60mAP-p写入操作之后观察到的。噪声概率最高的头部,在5.2×10-2处,由于应力的作用,其壁从后间隙闭合处向外辐射。磁畴结构在写入之后严重变形。噪声概率最低的头部,在1.6×104处,表现出正常的闭合域配置,几乎没有转换。这些结果表明,写入后的噪声主要在后间隙闭合附近产生。
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Correlation between Noise-after-Write and Magnetic Domain in Thin-Film Heads by Electron Microscopy
Noise-after-write has been reported in thin film heads, although its source or sources have not yet been identified. To discover these noise sources, I observed conversions of magnetic domain structure after writing with an electron microscope. The magnetic domain observations involved lock-in image processing for back-scattered electron contrast (type II), using a JEOL 2000FX II 200 kV electron microscope. Thin-film heads were excited by a 10 mA p-p , 100 kHz driving current. The magnetic domains in the upper yokes of the heads were observed after 60 mA p-p write operations. The head with the highest noise probability, at 5.2×10 -2 , exhibited walls radiating outward from the back-gap closure, which were due to stress. The magnetic domain structure was severely deformed after writing. The head with the lowest noise probability, at 1.6×10 4 , exhibited a normal closure domain configuration, with very little conversion. These results indicate that noise-after-write is generated mainly near the backgap closure.
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