一种基于单VDTA的新型电子可调谐高频Meminductor仿真器

IF 2.1 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Canadian Journal of Electrical and Computer Engineering Pub Date : 2023-06-05 DOI:10.1109/ICJECE.2023.3261886
Pankaj Kumar Sharma;Sadaf Tasneem;Rajeev Kumar Ranjan
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引用次数: 0

摘要

在本文中,我们提出了一种使用单电压差跨导放大器(VDTA)的电子可调谐接地忆电感器模拟器(MIE)。在所提出的MIE中,除了一个VDTA之外,还使用了两个MOSFET和两个电容器。总体而言,所提出的MIE只需要18个MOS晶体管和两个接地电容器。使用Cadence Virtuoso和180nm CMOS库验证了所提出的MIE的性能。模拟器的布局面积只有1081$\mu\text{m}^{2}$。拟议设计的工作频率高达25 MHz。为了验证理论和仿真结果,使用CA3080集成电路进行了实验,实验结果验证了仿真结果。拟议设计的功耗为5.93mW。
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A New Electronic Tunable High-Frequency Meminductor Emulator Based on a Single VDTA
In this article, we have proposed an electronic tunable grounded meminductor emulator (MIE) using a single voltage difference transconductance amplifier (VDTA). Along with one VDTA, two MOSFETs and two capacitors are used in the proposed MIE. Overall, the proposed MIE requires only 18 MOS transistors and two grounded capacitors. The performance of the proposed MIE was validated using Cadence Virtuoso with a 180-nm CMOS library. The layout area of the emulator is only 1081 $\mu \text{m}^{2}$ . The proposed design operates up to 25 MHz. To validate the theoretical and simulation results, an experiment was performed using CA3080 ICs and experimental results validate the simulated result. The power consumption of the proposed design is 5.93 mW.
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