碳源和碳含量对放电等离子烧结碳化硅材料组织和力学性能的影响

IF 0.9 4区 材料科学 Q3 MATERIALS SCIENCE, CERAMICS Processing and Application of Ceramics Pub Date : 2022-01-01 DOI:10.2298/pac2204384y
Z. Yaşar, V. Delucca, R. Haber
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引用次数: 1

摘要

研究了碳源和碳含量对致密碳化硅陶瓷的密度、显微组织、硬度和弹性性能的影响。加入1.5 ~ 4.5wt制备前驱体粉末。% C(碳素灯黑或酚醛树脂)和0.5 wt.% B4C到SiC,在1900?在氩气中,在50MPa压力下加热15分钟,中间温度为1400℃。C加热30分钟。结果表明,碳灯黑比酚醛树脂具有更好的混合效果,因为用酚醛树脂制成的样品中存在碳簇。碳含量的增加导致样品中4H多型量的减少。高于1.5wt的存在。%碳抑制晶粒生长和4H多型的存在。用1.5wt可生产相对密度大于99%TD的SiC样品。平均晶粒尺寸小,弹性模量高,硬度分别为2.28 μ m、453GPa和21.2GPa。
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The influence of carbon source and content on structure and mechanical properties of sic processed via spark plasma sintering method
The effects of carbon sources and carbon content on the density, microstructure, hardness and elastic properties of dense SiC ceramics were investigated. The precursor powders were prepared by adding 1.5-4.5wt.% C (carbon lamp black or phenolic resin) and 0.5 wt.% B4C to SiC and sintered at 1900?C for 15min under 50MPa pressure in argon with an intermediate dwell at 1400?C for 30min. The results showed that carbon lamp black provided better mixing than phenolic resin since carbon cluster was found in the samples made with phenolic resin. Increasing carbon content causes the decrease of 4H polytype amount in the samples. The presence of higher than 1.5wt.% carbon inhibits grain growth and the presence of the 4H polytype. SiC samples can be produced with relative density of more than 99%TD with 1.5wt.% carbon lamp black addition which shows small average grain size, high elastic modulus and hardness of 2.28 ?m, 453GPa and 21.2GPa, respectively.
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来源期刊
Processing and Application of Ceramics
Processing and Application of Ceramics MATERIALS SCIENCE, CERAMICS-
CiteScore
1.90
自引率
9.10%
发文量
14
审稿时长
10 weeks
期刊介绍: Information not localized
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