Shuang Zhao, Feiyue Yang, Jun Chen, Kunfeng Li, Zhifang Fei, Zichun Yang
{"title":"不同直径si3n4纳米线的高温氧化行为","authors":"Shuang Zhao, Feiyue Yang, Jun Chen, Kunfeng Li, Zhifang Fei, Zichun Yang","doi":"10.2298/pac2301039z","DOIUrl":null,"url":null,"abstract":"?-Si3N4 nanowires with diameters of 100-180 nm (Si3N4-W1) and 420-510 nm (Si3N4-W2) were synthesized by a modified chemical vapour deposition (CVD) method and their microstructure changes after high-temperature oxidation were studied. The results showed that both Si3N4 nanowires were not significantly oxidized when the temperature was lower than 900?C. However, the Si3N4-W1 microstructure began to change significantly after oxidation at 1200?C, while the Si3N4-W2 microstructure remained almost unchanged. Moreover, the Si3N4- W1 and Si3N4-W2 nanowires oxidized significantly after treatment at 1400?C, with weight gain of 26.4% and 13.7%, respectively.","PeriodicalId":20596,"journal":{"name":"Processing and Application of Ceramics","volume":null,"pages":null},"PeriodicalIF":0.9000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-temperature oxidation behaviour of si3n4 nanowires with different diameters\",\"authors\":\"Shuang Zhao, Feiyue Yang, Jun Chen, Kunfeng Li, Zhifang Fei, Zichun Yang\",\"doi\":\"10.2298/pac2301039z\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"?-Si3N4 nanowires with diameters of 100-180 nm (Si3N4-W1) and 420-510 nm (Si3N4-W2) were synthesized by a modified chemical vapour deposition (CVD) method and their microstructure changes after high-temperature oxidation were studied. The results showed that both Si3N4 nanowires were not significantly oxidized when the temperature was lower than 900?C. However, the Si3N4-W1 microstructure began to change significantly after oxidation at 1200?C, while the Si3N4-W2 microstructure remained almost unchanged. Moreover, the Si3N4- W1 and Si3N4-W2 nanowires oxidized significantly after treatment at 1400?C, with weight gain of 26.4% and 13.7%, respectively.\",\"PeriodicalId\":20596,\"journal\":{\"name\":\"Processing and Application of Ceramics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Processing and Application of Ceramics\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.2298/pac2301039z\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, CERAMICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Processing and Application of Ceramics","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.2298/pac2301039z","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, CERAMICS","Score":null,"Total":0}
High-temperature oxidation behaviour of si3n4 nanowires with different diameters
?-Si3N4 nanowires with diameters of 100-180 nm (Si3N4-W1) and 420-510 nm (Si3N4-W2) were synthesized by a modified chemical vapour deposition (CVD) method and their microstructure changes after high-temperature oxidation were studied. The results showed that both Si3N4 nanowires were not significantly oxidized when the temperature was lower than 900?C. However, the Si3N4-W1 microstructure began to change significantly after oxidation at 1200?C, while the Si3N4-W2 microstructure remained almost unchanged. Moreover, the Si3N4- W1 and Si3N4-W2 nanowires oxidized significantly after treatment at 1400?C, with weight gain of 26.4% and 13.7%, respectively.
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