通过原位电导测量在聚焦电子束诱导沉积中识别生长机制之间的交叉

IF 3.3 Q3 NANOSCIENCE & NANOTECHNOLOGY Nanofabrication Pub Date : 2014-12-15 DOI:10.2478/nanofab-2014-0009
M. Winhold, P. Weirich, C. Schwalb, M. Huth
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引用次数: 4

摘要

聚焦电子束诱导沉积是一种很有前途的纳米结构制备技术。然而,由于大多数用于沉积过程的有机金属前体分子的解离,制备的纳米结构含有有机残留物,导致沉积物的电导率很低。通过电子辐照或在高温反应气氛中对结构进行生长后处理可用于纯化样品。最近,引入了一种基于进化遗传算法的原位电导优化方法,该方法可以将钨基沉积层的电导提高一个数量级,并使用W(CO)6作为前驱体。这种方法甚至可以优化纳米结构的电导,而这种纳米结构的电导是不可能或不需要生长后处理的。然而,造成观测到的增强的机制尚未得到深入研究。在这项工作中,我们确定了样品电导率的驻留时间依赖性变化是电导率变化的主要贡献者。具体地说,化学成分随着停留时间的变化而急剧变化,导致金属含量在短停留时间内增加15%。生长速率的相对变化量小于25%,对电导的影响可以忽略不计。我们预计原位遗传算法优化程序将与聚焦电子或离子束诱导沉积制备的二元或三元体系的新发展高度相关。
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Identifying the crossover between growth regimes via in-situ conductance measurements in focused electron beam induced deposition
Abstract Focused electron beam induced deposition presents a promising technique for the fabrication of nanostructures. However, due to the dissociation of mostly organometallic precursor molecules employed for the deposition process, prepared nanostructures contain organic residues leading to rather low conductance of the deposits. Post-growth treatment of the structures by electron irradiation or in reactive atmospheres at elevated temperatures can be applied to purify the samples. Recently, an in-situ conductance optimization process involving evolutionary genetic algorithm techniques has been introduced leading to an increase of conductance by one order of magnitude for tungsten-based deposits using the precursor W(CO)6. This method even allows for the optimization of conductance of nano-structures for which post-growth treatment is not possible or desirable. However, the mechanisms responsible for the observed enhancement have not been studied in depth. In this work, we identified the dwell-time dependent change of conductivity of the samples to be the major contributor to the change of conductance. Specifically, the chemical composition drastically changes with a variation of dwelltime resulting in an increase of the metal content by 15 at% for short dwell-times. The relative change of growth rate amounts to less than 25 % and has a negligible influence on conductance. We anticipate the in-situ genetic algorithm optimization procedure to be of high relevance for new developments regarding binary or ternary systems prepared by focused electron or ion beam induced deposition.
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来源期刊
Nanofabrication
Nanofabrication NANOSCIENCE & NANOTECHNOLOGY-
自引率
10.30%
发文量
13
审稿时长
16 weeks
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