S. Yamaguchi, A. Yusufu, Takuma Shirahama, Y. Murakami, T. Onitsuka, Masayoshi Uno
{"title":"SiC表面SiO2氧化膜的高温稳定性","authors":"S. Yamaguchi, A. Yusufu, Takuma Shirahama, Y. Murakami, T. Onitsuka, Masayoshi Uno","doi":"10.3327/taesj.j18.044","DOIUrl":null,"url":null,"abstract":"SiC, which is a promising accident-tolerant fuel cladding, is a non-oxide, and it is known that pas-sive oxidation occurs, where by a protective oxide fi lm of SiO 2 is formed under atmospheric conditions above 900 ℃ . The reaction occurring at this high temperature is important in assessing the soundness of SiC during a severe accident, but the understanding of it is still insuf fi cient. In this study, to evalu-ate the high-temperature oxidation behavior when SiC cladding is exposed to the atmosphere ( 10 5 Pa ) during an accident involving a light-water reactor, an oxidation test was performed for up to 100 h at 1100 to 1500 ℃ . As a result, a SiO 2 oxide fi lm was formed on the surface of SiC, but the formation of bubbles originating from impurities and cracks due to a phase transformation was con fi rmed. In addi-tion, it was observed, for the fi rst time in this research, that a multilayered SiO 2 oxide fi lm was formed at 1500 ℃ . Therefore, it was shown that the oxidation reaction of SiC does not stop depending on the surrounding conditions under high temperature and atmospheric conditions.","PeriodicalId":55893,"journal":{"name":"Transactions of the Atomic Energy Society of Japan","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-Temperature Stability of SiO2 Oxide Film on Surface of SiC\",\"authors\":\"S. Yamaguchi, A. Yusufu, Takuma Shirahama, Y. Murakami, T. Onitsuka, Masayoshi Uno\",\"doi\":\"10.3327/taesj.j18.044\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SiC, which is a promising accident-tolerant fuel cladding, is a non-oxide, and it is known that pas-sive oxidation occurs, where by a protective oxide fi lm of SiO 2 is formed under atmospheric conditions above 900 ℃ . The reaction occurring at this high temperature is important in assessing the soundness of SiC during a severe accident, but the understanding of it is still insuf fi cient. In this study, to evalu-ate the high-temperature oxidation behavior when SiC cladding is exposed to the atmosphere ( 10 5 Pa ) during an accident involving a light-water reactor, an oxidation test was performed for up to 100 h at 1100 to 1500 ℃ . As a result, a SiO 2 oxide fi lm was formed on the surface of SiC, but the formation of bubbles originating from impurities and cracks due to a phase transformation was con fi rmed. In addi-tion, it was observed, for the fi rst time in this research, that a multilayered SiO 2 oxide fi lm was formed at 1500 ℃ . Therefore, it was shown that the oxidation reaction of SiC does not stop depending on the surrounding conditions under high temperature and atmospheric conditions.\",\"PeriodicalId\":55893,\"journal\":{\"name\":\"Transactions of the Atomic Energy Society of Japan\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Transactions of the Atomic Energy Society of Japan\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3327/taesj.j18.044\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Transactions of the Atomic Energy Society of Japan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3327/taesj.j18.044","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
High-Temperature Stability of SiO2 Oxide Film on Surface of SiC
SiC, which is a promising accident-tolerant fuel cladding, is a non-oxide, and it is known that pas-sive oxidation occurs, where by a protective oxide fi lm of SiO 2 is formed under atmospheric conditions above 900 ℃ . The reaction occurring at this high temperature is important in assessing the soundness of SiC during a severe accident, but the understanding of it is still insuf fi cient. In this study, to evalu-ate the high-temperature oxidation behavior when SiC cladding is exposed to the atmosphere ( 10 5 Pa ) during an accident involving a light-water reactor, an oxidation test was performed for up to 100 h at 1100 to 1500 ℃ . As a result, a SiO 2 oxide fi lm was formed on the surface of SiC, but the formation of bubbles originating from impurities and cracks due to a phase transformation was con fi rmed. In addi-tion, it was observed, for the fi rst time in this research, that a multilayered SiO 2 oxide fi lm was formed at 1500 ℃ . Therefore, it was shown that the oxidation reaction of SiC does not stop depending on the surrounding conditions under high temperature and atmospheric conditions.