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引用次数: 8
摘要
3D NAND技术开发和制造面临着许多挑战,以缩小其设备的规模,而计量在每一个转折点都显得更加困难。与平面NAND不同,3D NAND具有高纵横比的三维垂直结构。显然,自上而下的图像对于过程控制是不够的,内部结构控制变得比以前更重要,例如通道孔轮廓。此外,多层、特殊材料和YMTC独特的X-Tacking技术也带来了其他测量挑战:高晶圆弯曲、应力诱导叠加、不透明薄膜测量。技术开发可以采用一些破坏性的方法(TEM,蚀刻回扫描电镜),而制造只能采用非破坏性的方法。这推动了一些新的计量发展,包括x射线、质量测量和中红外光谱。随着3D NAND供应商转向150层器件,现有的计量工具将被推向极限。然而,计量必须创新。
Metrology Challenges in 3D NAND Flash Technical Development and Manufacturing
: 3D NAND technical development and manufacturing face many challenges to scale down their devices, and metrology stands out as much more difficult at each turn. Unlike planar NAND, 3D NAND has a three-dimensional vertical structure with high-aspect ratio. Obviously top-down images is not enough for process control, instead inner structure control becomes much more important than before, e.g. channel hole profiles. Besides, multi-layers, special materials and YMTC unique X-Tacking technology also bring other metrology challenges: high wafer bow, stress induced overlay, opaque film measurement. Technical development can adopt some destructive methodology (TEM, etch-back SEM), while manufacturing can only use non-destructive method. These drive some new metrology development, including X-Ray, mass measure and Mid-IR spectroscopy. As 3D NAND suppliers move to >150 layers devices, the existing metrology tools will be pushed to the limits. Still, the metrology must innovate.