{"title":"[论文]高迁移率顶栅IGZO TFT背板的车载OLED显示器","authors":"Yujiro Takeda, M. Aman, Shogo Murashige, Kazuatsu Ito, Ishida Izumi, Hiroshi Matsukizono, Naoki Makita","doi":"10.3169/mta.8.224","DOIUrl":null,"url":null,"abstract":"High performance IGZO TFTs with top gate structure were developed for an automotive OLED display backplane. Fabrication processes are optimized by balancing oxygen and hydrogen contents with µ-PCD method. The mobility of the IGZO TFTs reaches as high as 32 cm 2 /Vs with enhanced threshold voltages. We have checked the TFTs reliability under the positive bias temperature (PBT), negative bias temperature (NBT) and negative bias temperature illumination (NBTI) stress tests. As the IGZO TFTs shows slight changes of threshold voltage (V th ) within ±0.5V under PBT and NBT and even after NBTI stress tests, there is no critical deterioration. We expect these high mobility IGZO TFTs are stable enough to be used for OLED or other self-luminous displays. We have also demonstrated a prototype 12.3\" OLED module for automotive applications. The prototype flexible display showed an excellent brightness uniformity even after bending.","PeriodicalId":41874,"journal":{"name":"ITE Transactions on Media Technology and Applications","volume":null,"pages":null},"PeriodicalIF":0.5000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"[Paper] Automotive OLED Display with High Mobility Top Gate IGZO TFT Backplane\",\"authors\":\"Yujiro Takeda, M. Aman, Shogo Murashige, Kazuatsu Ito, Ishida Izumi, Hiroshi Matsukizono, Naoki Makita\",\"doi\":\"10.3169/mta.8.224\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High performance IGZO TFTs with top gate structure were developed for an automotive OLED display backplane. Fabrication processes are optimized by balancing oxygen and hydrogen contents with µ-PCD method. The mobility of the IGZO TFTs reaches as high as 32 cm 2 /Vs with enhanced threshold voltages. We have checked the TFTs reliability under the positive bias temperature (PBT), negative bias temperature (NBT) and negative bias temperature illumination (NBTI) stress tests. As the IGZO TFTs shows slight changes of threshold voltage (V th ) within ±0.5V under PBT and NBT and even after NBTI stress tests, there is no critical deterioration. We expect these high mobility IGZO TFTs are stable enough to be used for OLED or other self-luminous displays. We have also demonstrated a prototype 12.3\\\" OLED module for automotive applications. The prototype flexible display showed an excellent brightness uniformity even after bending.\",\"PeriodicalId\":41874,\"journal\":{\"name\":\"ITE Transactions on Media Technology and Applications\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2020-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ITE Transactions on Media Technology and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3169/mta.8.224\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ITE Transactions on Media Technology and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3169/mta.8.224","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 5
摘要
开发了一种用于汽车OLED显示背板的高性能顶栅结构IGZO tft。通过µ-PCD法平衡氧和氢含量,优化了制造工艺。随着阈值电压的提高,IGZO tft的迁移率高达32 cm 2 /Vs。我们在正偏置温度(PBT)、负偏置温度(NBT)和负偏置温度照明(NBTI)应力测试下检验了TFTs的可靠性。由于IGZO TFTs在PBT和NBT下,甚至在NBTI应力测试后,阈值电压(V th)在±0.5V内变化很小,没有出现临界劣化。我们期望这些高迁移率的IGZO tft足够稳定,可以用于OLED或其他自发光显示器。我们还展示了用于汽车应用的12.3英寸OLED模块原型。原型柔性显示器在弯曲后仍显示出良好的亮度均匀性。
[Paper] Automotive OLED Display with High Mobility Top Gate IGZO TFT Backplane
High performance IGZO TFTs with top gate structure were developed for an automotive OLED display backplane. Fabrication processes are optimized by balancing oxygen and hydrogen contents with µ-PCD method. The mobility of the IGZO TFTs reaches as high as 32 cm 2 /Vs with enhanced threshold voltages. We have checked the TFTs reliability under the positive bias temperature (PBT), negative bias temperature (NBT) and negative bias temperature illumination (NBTI) stress tests. As the IGZO TFTs shows slight changes of threshold voltage (V th ) within ±0.5V under PBT and NBT and even after NBTI stress tests, there is no critical deterioration. We expect these high mobility IGZO TFTs are stable enough to be used for OLED or other self-luminous displays. We have also demonstrated a prototype 12.3" OLED module for automotive applications. The prototype flexible display showed an excellent brightness uniformity even after bending.