{"title":"基于金属氧化物功能层的QLED性能优化与研究进展","authors":"Meiqi Su, Dandan Zhang","doi":"10.37188/cjl.20230016","DOIUrl":null,"url":null,"abstract":": Because metal oxides have good thermal stability and low sensitivity to water/oxygen , they are used as the most important charge transfer materials in quantum dot light emitting diodes ( QLED ) devices. However , the charge transfer ability of different metal oxides is different , and the interface energy level matching problem in differ⁃ ent device structures will cause the charge imbalance and even lead to exciton quenching. Therefore , in order to ob⁃ tain good device performance , it is necessary to modify and optimize the interface while ensuring the stability of the material. In this paper , metal oxides as charge transport layer , charge injection layer and charge blocking layer are described respectively , and the development of metal oxides in QLED applications in recent years is summarized by mixing other materials and constructing reasonable device structures","PeriodicalId":10121,"journal":{"name":"发光学报","volume":"36 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimization and Research Progress of QLED Performance Based on Metal Oxide Functional Layer\",\"authors\":\"Meiqi Su, Dandan Zhang\",\"doi\":\"10.37188/cjl.20230016\",\"DOIUrl\":null,\"url\":null,\"abstract\":\": Because metal oxides have good thermal stability and low sensitivity to water/oxygen , they are used as the most important charge transfer materials in quantum dot light emitting diodes ( QLED ) devices. However , the charge transfer ability of different metal oxides is different , and the interface energy level matching problem in differ⁃ ent device structures will cause the charge imbalance and even lead to exciton quenching. Therefore , in order to ob⁃ tain good device performance , it is necessary to modify and optimize the interface while ensuring the stability of the material. In this paper , metal oxides as charge transport layer , charge injection layer and charge blocking layer are described respectively , and the development of metal oxides in QLED applications in recent years is summarized by mixing other materials and constructing reasonable device structures\",\"PeriodicalId\":10121,\"journal\":{\"name\":\"发光学报\",\"volume\":\"36 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"发光学报\",\"FirstCategoryId\":\"1089\",\"ListUrlMain\":\"https://doi.org/10.37188/cjl.20230016\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"发光学报","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.37188/cjl.20230016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimization and Research Progress of QLED Performance Based on Metal Oxide Functional Layer
: Because metal oxides have good thermal stability and low sensitivity to water/oxygen , they are used as the most important charge transfer materials in quantum dot light emitting diodes ( QLED ) devices. However , the charge transfer ability of different metal oxides is different , and the interface energy level matching problem in differ⁃ ent device structures will cause the charge imbalance and even lead to exciton quenching. Therefore , in order to ob⁃ tain good device performance , it is necessary to modify and optimize the interface while ensuring the stability of the material. In this paper , metal oxides as charge transport layer , charge injection layer and charge blocking layer are described respectively , and the development of metal oxides in QLED applications in recent years is summarized by mixing other materials and constructing reasonable device structures
期刊介绍:
Chinese Journal of Luminescence (CJL), supervised by Chinese Academy of Sciences (CAS), Sponsored by Committee on luminescence of Chinese Physical Society and Changchun Institute of Optics, Fine mechanics and Physics(CIOMP)of Chinese Academy of Sciences, is an authoritatively scientific and technical periodical of China in the field of luminescence, which is read widely in providing original papers and reviews that describe recent developments on basic theory and experimental studies of excited state processes and green lighting projects. The journal was established at 1980, and named after LUMINESCENCE AND DISPLAY, then renamed as CJL in 1986.