高Si GG20铸铁中石墨片层生长的研究

A. P. Tschiptschin, W. Guesser
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引用次数: 0

摘要

本文对高Si GG20铸铁中石墨薄片的多面晶体横向生长结构进行了观察。3.82 wt.% Si, 3.25% wt.%C的轻度过共晶铸铁,在铁素体+球化珠光体基体中嵌入大量C型石墨片,灾难性地失败了。断裂是通过石墨薄片与金属基体的剥离来扩展的,在断裂面上暴露出石墨薄片的侧面。用扫描电镜(SEM)观察薄片形貌和亚结构。非常薄而灵活的三角形层,在“六角形玫瑰”中心点上形成核,表明一种涉及新碳添加原子结合的生长机制。在固态转变过程中,二次石墨的外延沉淀在a方向上表现出优先的生长习惯,产生碳原子容易附着的二维石墨烯片。此外,还可以推断出单个薄片的螺旋生长,从而导致薄片在c方向上变厚。考虑到石墨晶体缺陷可能在固态二次石墨析出过程中螺旋生长机制和石墨薄片增厚中起决定性作用,对结果进行了讨论。
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On the growth of graphite lamellae in a high Si GG20 cast iron
In this paper, observations are made on the faceted crystallographic lateral growth structure of graphite flakes in a high Si GG20 cast iron. A 3.82 wt.% Si, 3.25% wt.%C slightly hypereutectic cast iron with large type C graphite flakes embedded in a ferrite + spheroidized pearlite matrix failed catastrophically. Fracture is propagated by debonding the graphite flakes from the metallic matrix, exposing the graphite flakes’ lateral surfaces on the fracture surface. Flake morphology and substructure were observed using scanning electron microscopy (SEM). Very thin and flexible triangular layers, nucleating on a “hexagonal rosette” center point, suggest a growth mechanism involving the incorporation of new carbon add-atoms. Epitaxial precipitation of secondary graphite during solid-state transformation shows a preferred growth habit in the a-direction, producing 2-D sheets of graphene to which carbon atoms can easily attach. Furthermore, the spiral growth of individual sheets, contributing to the thickening of the flake in the c-direction, could be inferred. The results are discussed, considering that graphite crystalline defects may play a decisive role in the spiral growth mechanism and the thickening of the graphite flake during solid-state secondary graphite precipitation.
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审稿时长
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