基于0.18 μm工艺的CMOS光接收机前端设计

A. Shukla, R. Gamad, Rohan Raikwar
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引用次数: 3

摘要

本文报道了一种采用0.18 μm工艺的CMOS光接收机前端的设计。设计过程中,光电二极管采用反式阻抗放大器(TIA)实现宽带宽、高增益、低输入参考噪声和宽动态范围。自动增益控制(AGC)电压用于为多电平信号提供可变增益。本设计在0.18 μm UMC工艺下进行仿真,进行性能分析。仿真结果表明,最大TIA增益为67.26 dB?后置放大器的增益为86.70 dB?带宽范围为7.03 GHz ~ 11.5 GHz,分别对应0 ~ 3v AGC。在10ghz以内,输入参考噪声级值为43.86 pA/√Hz。此外,作者还获得了共模抑制比(CMRR)为72.42 dB,整流群延迟为144.48 ps。对设计进行了验证,并将报告的结果与先前发表的研究结果进行了比较,并对本文的结果进行了改进。
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Design of a CMOS Optical Receiver Front-End Using 0.18 μm Technology
This paper reports design of a CMOS optical receiver front-end using 0.18 μm technology. Design process is current associated with photodiode using trans-impedance amplifier (TIA) for wide bandwidth, high gain, low input referred noise and wide dynamic range. The Automated Gain Control (AGC) voltage is used to provide variable gain for multilevel signals. This design is simulated in 0.18 μm UMC technology for the performance analysis. The best simulation results are reported the maximum TIA gain of 67.26 dB? at 0 V AGC followed by a post amplifier gain of 86.70 dB?. The bandwidth range is 7.03 GHz to 11.5 GHz corresponding to 0 - 3 V AGC respectively. The input referred noise level value is 43.86 pA/√Hz up to 10 GHz frequency. In addition authors have obtained the common mode rejection ratio (CMRR) is 72.42 dB and rectified group delay is 144.48 ps. Verification of the design, reported results are compared with earlier published work and improvements obtained in the present results.
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