{"title":"高温下单电子晶体管漏极和栅极电流的新模型","authors":"A. Touati, S. Chatbouri, N. Sghaier, A. Kalboussi","doi":"10.4236/WJNSE.2012.24022","DOIUrl":null,"url":null,"abstract":"We propose a novel analytical model to describe the drain-source current as well as gate-source of single-electron transistors (SETs) at high temperature. Our model consists on summing the tunnel current and thermionic contribution. This model will be compared with another model.","PeriodicalId":66816,"journal":{"name":"纳米科学与工程(英文)","volume":"02 1","pages":"171-175"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature\",\"authors\":\"A. Touati, S. Chatbouri, N. Sghaier, A. Kalboussi\",\"doi\":\"10.4236/WJNSE.2012.24022\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a novel analytical model to describe the drain-source current as well as gate-source of single-electron transistors (SETs) at high temperature. Our model consists on summing the tunnel current and thermionic contribution. This model will be compared with another model.\",\"PeriodicalId\":66816,\"journal\":{\"name\":\"纳米科学与工程(英文)\",\"volume\":\"02 1\",\"pages\":\"171-175\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"纳米科学与工程(英文)\",\"FirstCategoryId\":\"1089\",\"ListUrlMain\":\"https://doi.org/10.4236/WJNSE.2012.24022\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"纳米科学与工程(英文)","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.4236/WJNSE.2012.24022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature
We propose a novel analytical model to describe the drain-source current as well as gate-source of single-electron transistors (SETs) at high temperature. Our model consists on summing the tunnel current and thermionic contribution. This model will be compared with another model.
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