{"title":"两个一维多隧道结阵列结构的SIMON研究","authors":"A. Touati, S. Chatbouri, N. Sghaier, A. Kalboussi","doi":"10.4236/WJNSE.2012.24023","DOIUrl":null,"url":null,"abstract":"Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Transistor (SET) and Single-Electron Memory (SEM). In this paper, we investigate a nano-device structure using a two one dimensional array MTJs connected to the basic Single Electron Circuits, in order to analyze the impact of physical parameters on the performances and application of this structure. The device generates can operate at room temperature. The simulation of single-electron circuit demonstrates with Monte Carlo simulator, SIMON.","PeriodicalId":66816,"journal":{"name":"纳米科学与工程(英文)","volume":"02 1","pages":"176-180"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Study of Two One-Dimensional Multi Tunnel Junctions Arrays Structures by SIMON\",\"authors\":\"A. Touati, S. Chatbouri, N. Sghaier, A. Kalboussi\",\"doi\":\"10.4236/WJNSE.2012.24023\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Transistor (SET) and Single-Electron Memory (SEM). In this paper, we investigate a nano-device structure using a two one dimensional array MTJs connected to the basic Single Electron Circuits, in order to analyze the impact of physical parameters on the performances and application of this structure. The device generates can operate at room temperature. The simulation of single-electron circuit demonstrates with Monte Carlo simulator, SIMON.\",\"PeriodicalId\":66816,\"journal\":{\"name\":\"纳米科学与工程(英文)\",\"volume\":\"02 1\",\"pages\":\"176-180\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"纳米科学与工程(英文)\",\"FirstCategoryId\":\"1089\",\"ListUrlMain\":\"https://doi.org/10.4236/WJNSE.2012.24023\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"纳米科学与工程(英文)","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.4236/WJNSE.2012.24023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of Two One-Dimensional Multi Tunnel Junctions Arrays Structures by SIMON
Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Transistor (SET) and Single-Electron Memory (SEM). In this paper, we investigate a nano-device structure using a two one dimensional array MTJs connected to the basic Single Electron Circuits, in order to analyze the impact of physical parameters on the performances and application of this structure. The device generates can operate at room temperature. The simulation of single-electron circuit demonstrates with Monte Carlo simulator, SIMON.
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