非晶金/硅多层膜形成金纳米颗粒

M. Aono, T. Ueda, H. Abe, Shintaro Kobayashi, K. Inaba
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引用次数: 1

摘要

通过透射电子显微镜(TEM)的直接观察,观察到在加热过程中沉积的非晶Au/Si多层膜(a-Au/a-Si)发生了不可逆的形态转变。在478 K (=Tzig)时,多层层的排列顺序变为锯齿状层状结构。最后,在508 K下,锯齿状结构转变为金纳米粒子。金纳米粒子在薄膜内的分布是随机的。加热过程中的原位x射线衍射可以在450 K(=)下澄清多层中的部分晶化Si (c-Si),对应于非晶Si (a-Si)伴随Au扩散的金属诱导晶化(MIC)。当进一步加热时,a-Au在480 K (=Tc)左右开始结晶,半径逐渐增大到3.2 nm,而c-Si的体积几乎不变。连续加热使结晶Au (c-Au)在600 K(=)时熔化为液态AuSi (l-AuSi),低于体共晶温度()。由于AuSi共晶效应,当温度大于时,液相与固相发生可逆相变。与每个循环的最高温度(673,873和1073 K)成比例,和Au的结晶温度接近。利用共晶体系中纳米颗粒形成的热力学理论,解释了纳米颗粒尺寸与共晶体系的关系。
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Au Nanoparticle Formation from Amorphous Au/Si Multilayer
By direct observations of transmission electron microscopy (TEM), irreversible morphological transformations of as-deposited amorphous Au/Si multilayer (a-Au/a-Si) were observed on heating. The well arrayed sequence of the multilayer changed to zigzag layered structure at 478 K (=Tzig). Finally, the zigzag structure transformed to Au nanoparticles at 508 K. The distribution of the Au nanoparticles was random within the thin film. In situ X-ray diffraction during heating can clarify partial crystallization Si (c-Si) in the multilayer at 450 K (= ), which corresponds to metal induced crystallization (MIC) from amorphous Si (a-Si) accompanying by Au diffusion. On further heating, a-Au started to crystallize at around 480 K (=Tc) and gradually grew up to 3.2 nm in radius, although the volume of c-Si was almost constant. Continuous heating caused crystal Au (c-Au) melting into liquid AuSi (l-AuSi) at 600 K (= ), which was lower than bulk eutectic temperature ( ). Due to the AuSi eutectic effect, reversible phase transition between liquid and solid occurred once temperature is larger than . Proportionally to the maximum temperatures at each cycles (673, 873 and 1073 K), both and Au crystallization temperature approaches to . Using a thermodynamic theory of the nanoparticle formation in the eutectic system, the relationship between and the nanoparticle size is explained.
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