二维材料红外和太赫兹探测器:现状与展望

IF 1.3 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Opto-Electronics Review Pub Date : 2023-04-01 DOI:10.24425/opelre.2020.134459
A. Rogalski, M. Kopytko, P. Martyniuk
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引用次数: 11

摘要

自石墨烯发现以来,人们对石墨烯在电子和光电子器件中的应用进行了深入而深入的研究。由于石墨烯和其他二维(2D)材料的特殊电子和光学特性,它们可以成为红外和太赫兹光电探测器的有希望的候选者。关于二维材料作为传感器的论文发表的数量是巨大的。然而,这些论文的作者主要针对涉及二维材料调查的研究。在本文中,这一主题是全面处理,包括理论估计和许多实验数据。在开始的基本性质和性能的石墨烯为基础,以及替代二维材料已简要描述。其次,与目前全球市场上提供的红外和太赫兹探测器相比,考虑了二维材料探测器的位置。介绍了一种新的基准,即所谓的“第19定律”,用于预测在接近室温下工作的背景受限HgCdTe光电二极管。接下来,这一定律将作为替代二维材料技术的参考。性能比较涉及检测器的响应性、检出率和响应时间。最后,对二维材料探测器在红外探测器家族中的地位进行了展望。
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2D material infrared and terahertz detectors: status and outlook
Article history: Received 05 May 2020 Received in revised form 16 Jun. 2020 Accepted 08 Jul. 2020 Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors. Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data. At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.
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来源期刊
Opto-Electronics Review
Opto-Electronics Review 工程技术-工程:电子与电气
CiteScore
1.90
自引率
12.50%
发文量
0
审稿时长
>12 weeks
期刊介绍: Opto-Electronics Review is peer-reviewed and quarterly published by the Polish Academy of Sciences (PAN) and the Association of Polish Electrical Engineers (SEP) in electronic version. It covers the whole field of theory, experimental techniques, and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. The scope of the published papers includes any aspect of scientific, technological, technical and industrial works concerning generation, transmission, transformation, detection and application of light and other forms of radiative energy whose quantum unit is photon. Papers covering novel topics extending the frontiers in optoelectronics or photonics are very encouraged. It has been established for the publication of high quality original papers from the following fields: Optical Design and Applications, Image Processing Metamaterials, Optoelectronic Materials, Micro-Opto-Electro-Mechanical Systems, Infrared Physics and Technology, Modelling of Optoelectronic Devices, Semiconductor Lasers Technology and Fabrication of Optoelectronic Devices, Photonic Crystals, Laser Physics, Technology and Applications, Optical Sensors and Applications, Photovoltaics, Biomedical Optics and Photonics
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