Effect of Auger recombination on non-equilibrium charge carrier concentration in InGaAsSb/AlGaAsSb quantum wells

We have experimentally studied the interband photoluminescence spectra of InGaAsSb/AlGaAsSb quantum wells with different well widths and calculated the dependence of the charge carrier concentration participating in radiative recombination on the pumping intensity. The results of theoretical calculations appeared to be in a good agreement with the experimental relationship between the photoluminescence intensity at spectral maxima and the pumping intensity. The resonant Auger recombination involving two holes and one electron and causing a significant decrease in the charge carrier concentration was detected in one of the samples. Recommendations for suppressing the harmful non-radiative Auger recombination were made to increase the operating efficiency of semiconductor injection lasers at wavelengths of about 3 µm.