{"title":"合金随机波动对µLED效率的影响及垂直接触效率的优化","authors":"Cheng-Han Ho, Yuh‐Renn Wu","doi":"10.1109/NUSOD52207.2021.9541503","DOIUrl":null,"url":null,"abstract":"µ-LED’s efficiency is enormously dependent on the chip size, which is believed to be the influence of sidewall traps. However, the decrease of IQE in AlInGaP based red LED is much stronger than nitride based LEDs. This paper examines the role of random alloy fluctuation with our 2D simulation software for the whole LED chip size to extract the major factors leading to the large IQE discrepancy between nitride-based and AlGaInP based LEDs. The design rule of the vertical LEDs to avoid the sidewall influences of µ-LED will be proposed in the presentation.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"18 2","pages":"65-66"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influences of Random Alloy Fluctuation to the Efficiency of µLED and Optimization of Efficiency with Vertical Type Contact\",\"authors\":\"Cheng-Han Ho, Yuh‐Renn Wu\",\"doi\":\"10.1109/NUSOD52207.2021.9541503\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"µ-LED’s efficiency is enormously dependent on the chip size, which is believed to be the influence of sidewall traps. However, the decrease of IQE in AlInGaP based red LED is much stronger than nitride based LEDs. This paper examines the role of random alloy fluctuation with our 2D simulation software for the whole LED chip size to extract the major factors leading to the large IQE discrepancy between nitride-based and AlGaInP based LEDs. The design rule of the vertical LEDs to avoid the sidewall influences of µ-LED will be proposed in the presentation.\",\"PeriodicalId\":6780,\"journal\":{\"name\":\"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"18 2\",\"pages\":\"65-66\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD52207.2021.9541503\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD52207.2021.9541503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influences of Random Alloy Fluctuation to the Efficiency of µLED and Optimization of Efficiency with Vertical Type Contact
µ-LED’s efficiency is enormously dependent on the chip size, which is believed to be the influence of sidewall traps. However, the decrease of IQE in AlInGaP based red LED is much stronger than nitride based LEDs. This paper examines the role of random alloy fluctuation with our 2D simulation software for the whole LED chip size to extract the major factors leading to the large IQE discrepancy between nitride-based and AlGaInP based LEDs. The design rule of the vertical LEDs to avoid the sidewall influences of µ-LED will be proposed in the presentation.
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