I. Srithanachai, S. Ueamanapong, B. Nararug, S. Niemchaoren
{"title":"透明触点光电探测器的电学特性","authors":"I. Srithanachai, S. Ueamanapong, B. Nararug, S. Niemchaoren","doi":"10.1109/ECTICON.2012.6254203","DOIUrl":null,"url":null,"abstract":"The influence of annealing treatment on structure properties of the indium tin oxide (ITO) films has been investigated. ITO films annealed to improve quality films were prepared by RF sputtering system at 100 W. The samples at different thicknesses were deposited on non-heated glass slide at room temperature. Annealing temperature in pure nitrogen atmosphere for 15 minutes was varied at 200, 300, 400 and 500°C, respectively. Effect of nitrogen flow on properties of ITO films has been studied. It has been observed that the energy dispersive x-ray (EDX) analysis showed O, Sn and In content in the ITO films. The effect of thermal annealing on roughness of the surface and on the structure of deposited film was observed by scanning electron microscopy (SEM) that grain size increases, the transmission of ITO thin films increases after annealing by UV-vis spectroscopy and the resistivity decreases after annealed from 9 to 1 ohm-cm.","PeriodicalId":6319,"journal":{"name":"2012 9th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology","volume":"21 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical characteristics of photodetector with transparent contact\",\"authors\":\"I. Srithanachai, S. Ueamanapong, B. Nararug, S. Niemchaoren\",\"doi\":\"10.1109/ECTICON.2012.6254203\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of annealing treatment on structure properties of the indium tin oxide (ITO) films has been investigated. ITO films annealed to improve quality films were prepared by RF sputtering system at 100 W. The samples at different thicknesses were deposited on non-heated glass slide at room temperature. Annealing temperature in pure nitrogen atmosphere for 15 minutes was varied at 200, 300, 400 and 500°C, respectively. Effect of nitrogen flow on properties of ITO films has been studied. It has been observed that the energy dispersive x-ray (EDX) analysis showed O, Sn and In content in the ITO films. The effect of thermal annealing on roughness of the surface and on the structure of deposited film was observed by scanning electron microscopy (SEM) that grain size increases, the transmission of ITO thin films increases after annealing by UV-vis spectroscopy and the resistivity decreases after annealed from 9 to 1 ohm-cm.\",\"PeriodicalId\":6319,\"journal\":{\"name\":\"2012 9th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology\",\"volume\":\"21 1\",\"pages\":\"1-5\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 9th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTICON.2012.6254203\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 9th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTICON.2012.6254203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical characteristics of photodetector with transparent contact
The influence of annealing treatment on structure properties of the indium tin oxide (ITO) films has been investigated. ITO films annealed to improve quality films were prepared by RF sputtering system at 100 W. The samples at different thicknesses were deposited on non-heated glass slide at room temperature. Annealing temperature in pure nitrogen atmosphere for 15 minutes was varied at 200, 300, 400 and 500°C, respectively. Effect of nitrogen flow on properties of ITO films has been studied. It has been observed that the energy dispersive x-ray (EDX) analysis showed O, Sn and In content in the ITO films. The effect of thermal annealing on roughness of the surface and on the structure of deposited film was observed by scanning electron microscopy (SEM) that grain size increases, the transmission of ITO thin films increases after annealing by UV-vis spectroscopy and the resistivity decreases after annealed from 9 to 1 ohm-cm.
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