S. A. Dargham, F. Ponchel, M. Soueidan, A. Khoury, J. Assaad, D. Remiens, D. Zaouk
{"title":"溶胶-凝胶法制备无铅BNT压电薄膜。","authors":"S. A. Dargham, F. Ponchel, M. Soueidan, A. Khoury, J. Assaad, D. Remiens, D. Zaouk","doi":"10.23647/ca.md20161217","DOIUrl":null,"url":null,"abstract":"The objective of this work is to synthesize lead-free piezoelectric thin films by the Sol-Gel method:bismuth sodium titanate (Bi0.5Na0.5TiO3 or BNT).BNT films were annealed with the rapid thermal process (RTP).The film treated at 700°C is dense and well crystallized in the perovskite phase. The first results of electricalcharacterizations showed promising dielectric, ferroelectric and piezoelectric performance. At 12 kHz, thedielectric constant and losses are 430 and 0.07, respectively. Ferroelectric hysteresis measurements indicated aremanent polarization of 10μC/cm2, associated with a coercive field of 70 kV/cm. The piezoelectric properties ofBNT films were studied with a laser Doppler interferometer: a piezoelectric coefficient (d33effmax) of 42 pm/V was measured.","PeriodicalId":19388,"journal":{"name":"OAJ Materials and Devices","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"LEAD-FREE BNT PIEZOELECTRIC THIN FILMS BY SOL-GEL METHOD.\",\"authors\":\"S. A. Dargham, F. Ponchel, M. Soueidan, A. Khoury, J. Assaad, D. Remiens, D. Zaouk\",\"doi\":\"10.23647/ca.md20161217\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The objective of this work is to synthesize lead-free piezoelectric thin films by the Sol-Gel method:bismuth sodium titanate (Bi0.5Na0.5TiO3 or BNT).BNT films were annealed with the rapid thermal process (RTP).The film treated at 700°C is dense and well crystallized in the perovskite phase. The first results of electricalcharacterizations showed promising dielectric, ferroelectric and piezoelectric performance. At 12 kHz, thedielectric constant and losses are 430 and 0.07, respectively. Ferroelectric hysteresis measurements indicated aremanent polarization of 10μC/cm2, associated with a coercive field of 70 kV/cm. The piezoelectric properties ofBNT films were studied with a laser Doppler interferometer: a piezoelectric coefficient (d33effmax) of 42 pm/V was measured.\",\"PeriodicalId\":19388,\"journal\":{\"name\":\"OAJ Materials and Devices\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"OAJ Materials and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23647/ca.md20161217\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"OAJ Materials and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23647/ca.md20161217","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
LEAD-FREE BNT PIEZOELECTRIC THIN FILMS BY SOL-GEL METHOD.
The objective of this work is to synthesize lead-free piezoelectric thin films by the Sol-Gel method:bismuth sodium titanate (Bi0.5Na0.5TiO3 or BNT).BNT films were annealed with the rapid thermal process (RTP).The film treated at 700°C is dense and well crystallized in the perovskite phase. The first results of electricalcharacterizations showed promising dielectric, ferroelectric and piezoelectric performance. At 12 kHz, thedielectric constant and losses are 430 and 0.07, respectively. Ferroelectric hysteresis measurements indicated aremanent polarization of 10μC/cm2, associated with a coercive field of 70 kV/cm. The piezoelectric properties ofBNT films were studied with a laser Doppler interferometer: a piezoelectric coefficient (d33effmax) of 42 pm/V was measured.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
