Simulation and Characterization of PIN Photodiode for Photonic Applications

Research conducted on silicon based photodetector technology has recently shown rapidly growing momentum to develop the robust silicon based detectors for photonic applications. The thrust is to manufacture low cost and high efficiency detectors with CMOS process compatibility. In this study, a new design and characterization of PIN photodiode is envisaged. The simulation tool, Silvaco TCAD (and its variants), was used to design and simulate the processes of the device. Electrical and optical measurements such as I-V characteristics (dark current), and internal/external quantum efficiencies were analysed to evaluate the designed and processed device structure for its potential applications in photonics and other detection mechanisms.