下一代逻辑开关的备选设计方法

D. Sacchetto, M. D. Marchi, G. Micheli, Y. Leblebici
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引用次数: 1

摘要

下一代逻辑开关器件预计将依赖于全新的技术,主要是由于最先进的CMOS开关越来越困难和限制,这反过来也将需要与CMOS技术明显不同的创新设计方法。在本文中,根据设计实现的要求和潜在的优势,展示了三种可供选择的新兴技术。首先,讨论了一种基于垂直堆叠栅极全能硅纳米线场效应管的CMOS进化方法。接下来,提出了一种基于双极性碳纳米管场效应管的替代设计方法。最后,提出了一种基于新发现的忆阻器件的新方法,提供了将存储和逻辑功能结合起来的可能性。
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Alternative design methodologies for the next generation logic switch
Next generation logic switch devices are expected to rely on radically new technologies mainly due to the increasing difficulties and limitations of state-of-the-art CMOS switches, which, in turn, will also require innovative design methodologies that are distinctly different from those used for CMOS technologies. In this paper, three alternative emerging technologies are showcased in terms of their requirements for design implementation and in terms of potential advantages. First, a CMOS evolutionary approach based on vertically-stacked gate-all-around Si nanowire FETs is discussed. Next, an alternative design methodology based on ambipolar carbon nanotube FETs is presented. Finally, a novel approach based on the recently discovered memristive devices is presented, offering the possibility of combining memory and logic functions.
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