英特尔公司高性能Ge/Si雪崩光电二极管的研制

2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference Pub Date : 2011-03-06 DOI:10.1364/OFC.2011.OWZ1

Y. Kang, Z. Huang, Y. Saado, J. Campbell, A. Pauchard, J. Bowers, M. Paniccia

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引用次数: 26

摘要

Ge/Si雪崩光电二极管具有创纪录的高增益带宽和通信波长灵敏度，以及10Gbps和40Gbps的高数据速率。这些器件可以使用CMOS技术与其他硅光子元件进行单片集成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High performance Ge/Si avalanche photodiodes development in intel

Ge/Si avalanche photodiodes with record high gain-bandwidth and sensitivity for communication wavelength and high data rate, 10Gbps and 40Gbps, is demonstrated. These devices can be monolithically integrated with other silicon photonics components using CMOS technology.

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2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference

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