激光二极管纵向光泵浦CdS/ZnSe异质结构半导体激光器

IF 0.9 4区工程技术 Q3 Engineering Quantum Electronics Pub Date : 2022-04-01 DOI:10.1070/qel18016

M. Butaev, V. Kozlovsky, Y. Skasyrsky

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引用次数: 3

摘要

研究了含有10个耦合量子阱的CdS/ZnSe异质结构光泵浦半导体激光器。该结构是通过金属有机气相外延在砷化镓衬底上生长的。在此基础上制备了具有干涉介电镜的微腔。在室温下，在波长为438 nm的InGaN/GaN脉冲激光二极管的纵向泵浦下，在波长为508 nm、脉冲持续时间为65 ns时，微腔的峰值功率达到100 mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Semiconductor laser based on a CdS/ZnSe heterostructure with longitudinal optical pumping by a laser diode

An optically pumped semiconductor laser based on a CdS/ZnSe heterostructure containing 10 coupled quantum wells is studied. The structure is grown by metalorganic vapour phase epitaxy on a GaAs substrate. A microcavity with interference dielectric mirrors is fabricated based on this structure. At room temperature under longitudinal pumping by an InGaN/GaN pulsed laser diode with a wavelength of 438 nm, the peak power of the microcavity reaches 100 mW at a wavelength of 508 nm and a pulse duration of 65 ns.

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来源期刊

Quantum Electronics 工程技术-工程：电子与电气

CiteScore

3.00

自引率

11.10%

发文量

审稿时长

3-6 weeks

期刊介绍： Quantum Electronics covers the following principal headings Letters Lasers Active Media Interaction of Laser Radiation with Matter Laser Plasma Nonlinear Optical Phenomena Nanotechnologies Quantum Electronic Devices Optical Processing of Information Fiber and Integrated Optics Laser Applications in Technology and Metrology, Biology and Medicine.