{"title":"含Bi的InP和GaSb外延层带隙减小","authors":"M. K. Bhowal, T. D. Das","doi":"10.5958/2454-762X.2017.00017.8","DOIUrl":null,"url":null,"abstract":"We report on the growth of InPBi and GaSbBi epitaxial layers by liquid phase epitaxy. Photoluminescence measurements showed a bandgap reduction of 55 meV for InPBi and 24 meV for GaSbBi due to the incorporation of Bi in the III-V lattice.","PeriodicalId":14491,"journal":{"name":"Invertis Journal of Science & Technology","volume":"12 1","pages":"113-117"},"PeriodicalIF":0.0000,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bandgap reduction of InP and GaSb epitaxial layers containing Bi\",\"authors\":\"M. K. Bhowal, T. D. Das\",\"doi\":\"10.5958/2454-762X.2017.00017.8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the growth of InPBi and GaSbBi epitaxial layers by liquid phase epitaxy. Photoluminescence measurements showed a bandgap reduction of 55 meV for InPBi and 24 meV for GaSbBi due to the incorporation of Bi in the III-V lattice.\",\"PeriodicalId\":14491,\"journal\":{\"name\":\"Invertis Journal of Science & Technology\",\"volume\":\"12 1\",\"pages\":\"113-117\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Invertis Journal of Science & Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.5958/2454-762X.2017.00017.8\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Invertis Journal of Science & Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5958/2454-762X.2017.00017.8","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bandgap reduction of InP and GaSb epitaxial layers containing Bi
We report on the growth of InPBi and GaSbBi epitaxial layers by liquid phase epitaxy. Photoluminescence measurements showed a bandgap reduction of 55 meV for InPBi and 24 meV for GaSbBi due to the incorporation of Bi in the III-V lattice.