光纤和光纤预制体缺陷的阴极发光

H.W. Simmons , C.E. Nockolds , G.R. Atkins , S.B. Poole , M.G. Sceats
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引用次数: 7

摘要

利用扫描电子显微镜的阴极发光(CL)技术对锗硅预制品和MCVD法制备的光纤进行了分析。虽然通常对掺杂剂的分布很敏感,但CL是这些材料在制造过程中引入的缺陷(例如归因于GeE中心的缺陷)的更敏感的指标。对不同条件下生产的预制体进行了分析,评价了制造工艺对引入缺陷的影响。结果表明,CL可用于光纤预制体的常规分析和评估光纤制造过程控制的发展。
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Cathodoluminescence of defects in optical fibres and optical fibre preforms

Cathodoluminescence (CL) in the scanning electron microscope has been applied to the analysis of germanosilicate preforms and optical fibres prepared by the MCVD process. While generally sensitive to the distribution of dopants, CL is an even more sensitive indicator of defects in these materials (such as those attributed to GeE' centres) introduced during fabrication. Some preforms manufactured under different conditions were analysed by CL to assess the influence of fabrication technique on the introduction of defects. Results indicate that CL could be useful for routine analysis of optical fibre preforms and for assessing the development of process control for optical fibre manufacture.

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