不同浓度NiO薄膜的合成及物理性能表征

IF 1.5 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Advances in Materials Science Pub Date : 2020-09-01 DOI:10.2478/adms-2020-0017
B. Maaoui, Y. Aoun, S. Benramache, A. Nid, R. Far, A. Touati
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引用次数: 4

摘要

摘要本研究采用喷射沉积技术在玻璃基板上沉积氧化镍;研究了不同NiO浓度(0.05、0.10和0.15 mol.l−1)下的结构、光学和电学性质。在0.1 mol.l−1的温度下,沉积的NiO膜的最小晶粒尺寸为11.97 nm,具有强(111)择优取向的立方结构。而α-Ni(OH)2则在0.15 mol.l−1时出现。NiO薄膜在可见光区具有良好的透明性,带隙能量在3.54 ~ 376 eV之间受NiO浓度的影响,结果表明,在0.05 mol.l−1条件下制备的NiO薄膜无序性小,缺陷少。在0.15 mol.l−1下沉积的NiO膜电导率为0.169 (Ω.cm)−1。
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Synthesis and Characterization of Physical Properties of the NiO Thin Films by Various Concentrations
Abstract In this work, nickel oxide was deposited on a glass substrate at by spray deposition technique; the structural, optical and electrical properties were studied at different NiO concentrations (0.05, 0.10 and 0.15 mol.l−1). Polycrystalline NiO films with a cubic structure with a strong (111) preferred orientation were observed at all sprayed films with minimum crystallite size of 11.97 nm was attained of deposited film at 0.1 mol.l−1. However, α-Ni(OH)2 was observed at 0.15 mol.l−1. The NiO thin films have good transparency in the visible region, the band gap energy varies from 3.54 to 376 eV was affected by NiO concentration, it is shown that the NiO thin film prepared at 0.05 mol.l−1 has less disorder with few defects. The NiO film deposited at 0.15 mol.l−1 has the electrical conductivity was 0.169 (Ω.cm)−1.
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Advances in Materials Science
Advances in Materials Science MATERIALS SCIENCE, MULTIDISCIPLINARY-
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