CdSeTe吸收剂中埋藏结的证据

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2020-06-14 DOI:10.1109/PVSC45281.2020.9300427

Sean Jones, J. Moseley, B. Gorman, M. Al‐Jassim, T. Ablekim, H. Guthrey

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引用次数: 1

摘要

引入硒诱导的带隙梯度已被证明是改进碲化镉器件的一个有前途的途径。在沉积过程中控制最大硒浓度可以获得更好的器件性能。本文测量了生长硒浓度在0 ~ 20%之间的CdSeTe/CdTe器件的电子束感应电流图。结果显示了一个收集档案，这在类似的设备之前没有见过。给出了EBIC结果和几种解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Evidence of Buried Junction in CdSeTe Absorbers

The introduction of Se induced band gap gradients have been shown to be a promising path for improving CdTe devices. Controlling maximum selenium concentration during deposition should allow for better device performance. In this work electron beam induced current maps were measured for CdSeTe/CdTe devices with as-grown selenium concentration between 0 and 20 percent. Results show a collection profile which has not been seen before in similar devices. EBIC results and several interpretations are presented.

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2020 47th IEEE Photovoltaic Specialists Conference (PVSC)

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