纳米光子芯片上量子点单光子源的量子频率转换。

Anshuman Singh, Qing Li, Shunfa Liu, Ying Yu, Xiyuan Lu, Christian Schneider, Sven Höfling, John Lawall, Varun Verma, Richard Mirin, Sae Woo Nam, Jin Liu, Kartik Srinivasan
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引用次数: 0

摘要

单个自组装砷化镓/砷化镓量子点是量子信息科学领域前景光明的无差别光子源。然而,由于量子点生长过程中固有的不均匀展宽,它们的发射波长分布限制了创建多个相同光源的能力。量子频率转换可以克服这一问题,尤其是在使用可扩展的芯片集成技术的情况下。在此,我们首次在硅纳米光子芯片上演示了量子点单光子源的量子频率转换。来自微柱状腔体中量子点的单光子进行了波长位移,片上转换效率≈ 12%,但受量子点光子线宽的限制。频率转换后光的强度自相关函数 g(2)(τ) 为反束,g(2)(0)=0.290±0.030,而转换前的值为 g(2)(0)=0.080±0.003。我们证明了我们的频率转换接口作为量子点源资源的适用性,它在宽输入波长范围(840 纳米到 980 纳米)内的有效性,以及它实现其他方法难以获得的可调波长偏移的能力。
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Quantum Frequency Conversion of a Quantum Dot Single-Photon Source on a Nanophotonic Chip.

Single self-assembled InAs/GaAs quantum dots are promising bright sources of indistinguishable photons for quantum information science. However, their distribution in emission wavelength, due to inhomogeneous broadening inherent to their growth, has limited the ability to create multiple identical sources. Quantum frequency conversion can overcome this issue, particularly if implemented using scalable chip-integrated technologies. Here, we report the first demonstration of quantum frequency conversion of a quantum dot single-photon source on a silicon nanophotonic chip. Single photons from a quantum dot in a micropillar cavity are shifted in wavelength with an on-chip conversion efficiency ≈ 12 %, limited by the linewidth of the quantum dot photons. The intensity autocorrelation function g(2)(τ) for the frequency-converted light is antibunched with g(2)(0)=0.290±0.030, compared to the before-conversion value g(2)(0)=0.080±0.003. We demonstrate the suitability of our frequency conversion interface as a resource for quantum dot sources by characterizing its effectiveness across a wide span of input wavelengths (840 nm to 980 nm), and its ability to achieve tunable wavelength shifts difficult to obtain by other approaches.

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Quantum Frequency Conversion of a Quantum Dot Single-Photon Source on a Nanophotonic Chip. Single-Photon Detection by Cavity-Assisted All-Optical Gain Design Optimization for Semiconductor Lasers with High-Order Surface Gratings having Multiple Periods All-electronic THz Nanoscopy OpenFlow-Control of an OAM-Based Two-Layer Switch Supporting 100Gb/s Real Data-Traffic
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