{"title":"新型输入匹配网络设计的高效f类功率放大器","authors":"Mahya Parnianchi","doi":"10.46300/9106.2022.16.106","DOIUrl":null,"url":null,"abstract":"This paper presents a novel access to develop a class-F power amplifier with high power-added efficiency (PAE). The main goal of the proposed PA is to obtain high PAE. The proposed HCC consists a design of output matching circuit (OMN) and input matching combined with a symmetric low-pass filter (LPF) reported. To accomplish a high-efficiency performance, a low-voltage pHEMT in the circuit was executed to supply the required dc-supply voltage. It yielded nth harmonic suppression and high-power added efficiency (PAE). The simulation was carried out using harmonic balance analysis. The power amplifier proposed in this study was fabricated at fundamental frequency of 1 GHz with PAE of 80% and DE of 86% under 12.3dBm input power and very low drain voltage of 2 V. This class-F PA manufactured with such features can be utilized for power amplification in wireless transmitter communication systems.","PeriodicalId":13929,"journal":{"name":"International Journal of Circuits, Systems and Signal Processing","volume":"143 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High-efficiency Class-F Power Amplifier with a New Design of Input Matching Network\",\"authors\":\"Mahya Parnianchi\",\"doi\":\"10.46300/9106.2022.16.106\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a novel access to develop a class-F power amplifier with high power-added efficiency (PAE). The main goal of the proposed PA is to obtain high PAE. The proposed HCC consists a design of output matching circuit (OMN) and input matching combined with a symmetric low-pass filter (LPF) reported. To accomplish a high-efficiency performance, a low-voltage pHEMT in the circuit was executed to supply the required dc-supply voltage. It yielded nth harmonic suppression and high-power added efficiency (PAE). The simulation was carried out using harmonic balance analysis. The power amplifier proposed in this study was fabricated at fundamental frequency of 1 GHz with PAE of 80% and DE of 86% under 12.3dBm input power and very low drain voltage of 2 V. This class-F PA manufactured with such features can be utilized for power amplification in wireless transmitter communication systems.\",\"PeriodicalId\":13929,\"journal\":{\"name\":\"International Journal of Circuits, Systems and Signal Processing\",\"volume\":\"143 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Circuits, Systems and Signal Processing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.46300/9106.2022.16.106\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Circuits, Systems and Signal Processing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.46300/9106.2022.16.106","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
High-efficiency Class-F Power Amplifier with a New Design of Input Matching Network
This paper presents a novel access to develop a class-F power amplifier with high power-added efficiency (PAE). The main goal of the proposed PA is to obtain high PAE. The proposed HCC consists a design of output matching circuit (OMN) and input matching combined with a symmetric low-pass filter (LPF) reported. To accomplish a high-efficiency performance, a low-voltage pHEMT in the circuit was executed to supply the required dc-supply voltage. It yielded nth harmonic suppression and high-power added efficiency (PAE). The simulation was carried out using harmonic balance analysis. The power amplifier proposed in this study was fabricated at fundamental frequency of 1 GHz with PAE of 80% and DE of 86% under 12.3dBm input power and very low drain voltage of 2 V. This class-F PA manufactured with such features can be utilized for power amplification in wireless transmitter communication systems.