拓扑半金属候选物TbPtBi的大异常霍尔角

Jie Chen, Hang Li, B. Ding, Hong-wei Zhang, Enke Liu, Wenhong Wang
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引用次数: 12

摘要

研究了具有简单带结构的磁场诱导拓扑半金属TbPtBi反铁磁半heusler单晶的磁输运性质。我们发现在高磁场(bbbb7t)下,异常霍尔电阻率与磁场的非单调依赖关系,这是由于外加磁场引起的类泽曼分裂引起的带结构变化所致。实验结果表明,可靠的异常霍尔电阻率和电导率分别达到0.6798m{\Omega}cm和125{\Omega}-1cm-1。在TbPtBi中获得了高达33%的大AHA,可与典型的铁磁性Weyl半金属相媲美。分析结果表明,这主要归因于EF附近的拓扑带和低载流子密度。
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Large anomalous Hall angle in a topological semimetal candidate TbPtBi
The magnetotransport properties in antiferromagnetic half-Heusler single crystals of TbPtBi, a magnetic-field-induced topological semimetal with simple band structure, are investigated. We found that a nonmonotonic magnetic field dependence of the anomalous Hall resistivity in a high magnetic field (B>7T), which come from the change of band structure induced by the Zeeman-like splitting when applying the external magnetic field. The experiment results show that credible anomalous Hall resistivity and conductivity reach up to 0.6798m{\Omega}cm and 125{\Omega}-1cm-1, respectively. A large AHA up to 33% is obtained in TbPtBi, which is comparable to typical ferromagnetic Weyl semimetal. The analysis of results show it should be attributed to topological band around EF and low carrier density.
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