尺寸和几何效应对硅纳米线空穴有效质量的紧密结合研究

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI:10.1109/SNW.2010.5562567

Naoya Moriokaa, H. Yoshioka, J. Suda, T. Kimoto

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引用次数: 0

摘要

目前对沿[001]、[110]和[111]的矩形SiNWs的紧密结合研究表明，[001]和[110]NWs在{001}基面上的孔m*与宽度有很强的依赖性。由于这种性质可能使器件的设计变得困难，因此这些NWs被认为对p通道器件不利。相比之下，(112)和(1)基面上的矩形[111]NWs有利于p通道器件，因为它们具有最小的孔m*，其值对宽度的变化具有很强的抵抗力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Tight-binding study of size and geometric effects on hole effective mass of silicon nanowires

The present tight-binding study of rectangular SiNWs along [001], [110], and [111] revealed that the hole m* of [001] and [110] NWs on the {001} basal face has strong dependence on the width. Because this nature may make the design of devices difficult, these NWs are considered to be unfavorable for p-channel devices. In contrast, rectangular [111] NWs on both (112̄) and (1̄10) basal faces are favorable for p-channel devices because they have the smallest hole m* and its value is very resistant to the variability of the width.

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