激光退火对CdTe薄膜结构、电学和光学性能的影响

A.L. Dawar , C. Jagadish, K.V. Ferdinand, Anil Kumar , P.C. Mathur
{"title":"激光退火对CdTe薄膜结构、电学和光学性能的影响","authors":"A.L. Dawar ,&nbsp;C. Jagadish,&nbsp;K.V. Ferdinand,&nbsp;Anil Kumar ,&nbsp;P.C. Mathur","doi":"10.1016/0378-5963(85)90218-1","DOIUrl":null,"url":null,"abstract":"<div><p>CdTe films of 0.7 μm thickness were deposited by a resistive heating onto glass and KBr substrates kept at 200°C. The films were irradiated with laser pulses of various energy densities. A pulsed lase (Nd: YAG) capable of producing 20 ns pulses of wavelength 1.06 μm with varying energy densities (2–50 mJ/cm<sup>2</sup>) was employed. The films were examined by TEM and X-ray diffraction and found to be polycrystalline. DC conductivity and Hall coefficient measurements were made on the films in the temperature range 77–400 K. The optical energy gap has been calculated using the optical transmission spectra.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 846-858"},"PeriodicalIF":0.0000,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90218-1","citationCount":"16","resultStr":"{\"title\":\"Effect of laser annealing on the structural, electrical and optical properties of CdTe thin films\",\"authors\":\"A.L. Dawar ,&nbsp;C. Jagadish,&nbsp;K.V. Ferdinand,&nbsp;Anil Kumar ,&nbsp;P.C. Mathur\",\"doi\":\"10.1016/0378-5963(85)90218-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>CdTe films of 0.7 μm thickness were deposited by a resistive heating onto glass and KBr substrates kept at 200°C. The films were irradiated with laser pulses of various energy densities. A pulsed lase (Nd: YAG) capable of producing 20 ns pulses of wavelength 1.06 μm with varying energy densities (2–50 mJ/cm<sup>2</sup>) was employed. The films were examined by TEM and X-ray diffraction and found to be polycrystalline. DC conductivity and Hall coefficient measurements were made on the films in the temperature range 77–400 K. The optical energy gap has been calculated using the optical transmission spectra.</p></div>\",\"PeriodicalId\":100105,\"journal\":{\"name\":\"Applications of Surface Science\",\"volume\":\"22 \",\"pages\":\"Pages 846-858\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0378-5963(85)90218-1\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applications of Surface Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0378596385902181\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applications of Surface Science","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0378596385902181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

摘要

在200℃的温度下,通过电阻加热在玻璃和KBr衬底上沉积了厚度为0.7 μm的CdTe薄膜。用不同能量密度的激光脉冲照射薄膜。脉冲激光(Nd: YAG)能够产生波长1.06 μm的20 ns脉冲,能量密度为2-50 mJ/cm2。薄膜经透射电镜和x射线衍射检测为多晶。在77 ~ 400 K的温度范围内测量了薄膜的直流电导率和霍尔系数。利用透射光谱计算了光能隙。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Effect of laser annealing on the structural, electrical and optical properties of CdTe thin films

CdTe films of 0.7 μm thickness were deposited by a resistive heating onto glass and KBr substrates kept at 200°C. The films were irradiated with laser pulses of various energy densities. A pulsed lase (Nd: YAG) capable of producing 20 ns pulses of wavelength 1.06 μm with varying energy densities (2–50 mJ/cm2) was employed. The films were examined by TEM and X-ray diffraction and found to be polycrystalline. DC conductivity and Hall coefficient measurements were made on the films in the temperature range 77–400 K. The optical energy gap has been calculated using the optical transmission spectra.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Editorial Board Subject index Author index Preface Effect of different methods of oxidation on SiSiO2 interface state properties
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1