在硅和蓝宝石表面沉积YSZ层上MOCVD制备YBCO:中间层对超导膜质量的影响

G. Garcia, J. Casado, J. Llibre, M. Doudkowski, J. Santiso, A. Figueras, S. Schamm, D. Dorignac, C. Grigis, M. Aguiló
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引用次数: 2

摘要

利用MOCVD技术在硅和蓝宝石表面沉积了YSZ缓冲层。沉积在硅上的层沿[100]方向取向高,无面内取向,可能是由于SiO2非晶夹层的存在。相反,在(1-102)蓝宝石上获得外延YSZ,显示出由以下关系定义的面内纹理:(100)YSZ //(1-102)蓝宝石和(110)YSZ //(01-12)蓝宝石。随后,利用MOCVD在YSZ表面沉积YBCO薄膜。超导层的结构、形态和电学特性与缓冲层的面内织构有关。
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Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film
YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO2 amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an inplane texture defined by the following relationships : (100) YSZ // (1-102) sapphire and (110) YSZ // (01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers.
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