化学沉积合金半导体薄膜

M. Skyllas-Kazacos, J.F. McCann, R. Arruzza
{"title":"化学沉积合金半导体薄膜","authors":"M. Skyllas-Kazacos,&nbsp;J.F. McCann,&nbsp;R. Arruzza","doi":"10.1016/0378-5963(85)90244-2","DOIUrl":null,"url":null,"abstract":"<div><p>The chemical deposition method has been employed in the preparation of alloy semiconductor thin films. Thin films of Cd<sub>1−<em>x</em></sub>Hg<sub><em>x</em></sub>S and Cd<sub>1−<em>x</em></sub>Pb<sub><em>x</em></sub>S alloys were deposited onto titanium substrates from thiourea solutions. A monotonic decrease in the bandgaps of the semiconductor alloys was obtained as the Hg and Pb ratio was increased. Bandgap values of 1.8 and 1.6eV were measured for electrodes with a Hg: Cd ratio and a Pb: Cd ratio of 0.18 respectively, considerably lower than the bandgap of pure CdS.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 1091-1097"},"PeriodicalIF":0.0000,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90244-2","citationCount":"7","resultStr":"{\"title\":\"Chemically deposited alloy semiconductor thin films\",\"authors\":\"M. Skyllas-Kazacos,&nbsp;J.F. McCann,&nbsp;R. Arruzza\",\"doi\":\"10.1016/0378-5963(85)90244-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The chemical deposition method has been employed in the preparation of alloy semiconductor thin films. Thin films of Cd<sub>1−<em>x</em></sub>Hg<sub><em>x</em></sub>S and Cd<sub>1−<em>x</em></sub>Pb<sub><em>x</em></sub>S alloys were deposited onto titanium substrates from thiourea solutions. A monotonic decrease in the bandgaps of the semiconductor alloys was obtained as the Hg and Pb ratio was increased. Bandgap values of 1.8 and 1.6eV were measured for electrodes with a Hg: Cd ratio and a Pb: Cd ratio of 0.18 respectively, considerably lower than the bandgap of pure CdS.</p></div>\",\"PeriodicalId\":100105,\"journal\":{\"name\":\"Applications of Surface Science\",\"volume\":\"22 \",\"pages\":\"Pages 1091-1097\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0378-5963(85)90244-2\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applications of Surface Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0378596385902442\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applications of Surface Science","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0378596385902442","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

化学沉积法已被应用于合金半导体薄膜的制备。在硫脲溶液中沉积了Cd1−xHgxS和Cd1−xPbxS合金薄膜。随着汞、铅比的增加,半导体合金的带隙单调减小。当Hg: Cd比和Pb: Cd比为0.18时,电极的带隙值分别为1.8 ev和1.6eV,明显低于纯CdS的带隙。
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Chemically deposited alloy semiconductor thin films

The chemical deposition method has been employed in the preparation of alloy semiconductor thin films. Thin films of Cd1−xHgxS and Cd1−xPbxS alloys were deposited onto titanium substrates from thiourea solutions. A monotonic decrease in the bandgaps of the semiconductor alloys was obtained as the Hg and Pb ratio was increased. Bandgap values of 1.8 and 1.6eV were measured for electrodes with a Hg: Cd ratio and a Pb: Cd ratio of 0.18 respectively, considerably lower than the bandgap of pure CdS.

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